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Study of fluorine doped zinc oxide thin films prepared by RF magnetron sputtering for thin film solar cell applications
|關鍵字:||sputtering;濺鍍;FZO;hydrogen plasma;solar cells;氧化鋅摻氟;氫電漿;太陽電池||出版社:||光電工程研究所||引用:|| K. Nakahara, K. Tamura, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, S. Niki, “Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes”, Jpn. J. Appl. Phys. 43 (2004) L180–L182.  T.J. Hsueh, C.L. Hsu, S.J. Chang, I-C. Chen, “Laterally grown ZnO nanowire ethanol gas sensors”, Sens. Actuators B 126 (2007) 473–477.  Z.A. Ansari, R.N. Karekar, R.C. Aiyer, “Humidity sensor using planar optical waveguides with claddings of various oxide materials”, Thin Solid Films 305 (1997) 330–335.  Y.S. Rim, S.M. Kim, K.H. Kim, “Effects of Substrate Heating and Film Thickness on Properties of Silver-Based ZnO Multilayer Thin Films”, Jpn. J. Appl. Phys. 47 (2008) 5022–5027.  L. Zhang, H. Zhang, Y. Bai, J.W. Ma, J. Cao, X.Y. Jiang and Z.L. 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Fluorine-doped zinc oxide (FZO) thin films were deposited on Corning 1737 glasses by RF magnetron sputtering. This study investigated effects of deposition parameters on properties of FZO thin films by changing sputtering power, substrate temperature and hydrogen content. The FZO thin films deposited at room temperature were subsequently treated by H2+Ar plasma. Effects of the post treatment on properties of FZO films were investigated. Finally, α-Si thin film solar cells were fabricated using the developed FZO films as window layers to study the influence of diluted hydrochloric acid (HCl) etching and the post treatment on properties of solar cells.
The prepared films had the lowest electrical properties (ρ=9.29×10-4 Ω-cm) and average optical transmittance of 90% in the wavelength range of 400-700 nm for the 650-nm-thick FZO thin films deposited with the RF power of 150 W at room temperature. After plasma treatment, the lowest resistivity was achieved under the conditions of RF power of 25 W, substrate temperature of 200 °C, and working pressure of 1 torr. The film resistivity decreased from 9.29×10-4 Ω-cm to 7.92×10-4 Ω-cm and the average optical transmittance was remained.
Furthermore, the process gases with various H2/(H2+Ar) ratios significantly affect the resistivity of FZO films. After process optimization, the lowest resistivity of 5.549×10-4 Ω-cm and average optical transmittance of 90% were obtained at the H2/(H2+Ar) ratio of 3%.
For diluted HCl etched films, the resistivity slightly increased and the surface morphology obviously became rougher. The haze ratio (400-700 nm) of the etched FZO films increased from 0.64% to 46.1% after 0.5% diluted HCl etching.
Finally, α-Si thin film solar cells were fabricated by using the 0.2%-HCl etched and plasma treated FZO film as the window layer. Its short-circuit current density, fill factor, and efficiency increased by 18%, 3%, and 20%, respectively, as compared to that using the as-deposited FZO films.
FZO薄膜以射頻功率150 W，基板溫度為室溫，薄膜厚度650 nm條件下，可得到最佳光電特性表現的FZO薄膜，其電阻率為9.29×10-4 Ω-cm，可見光平均穿透率約為90%。接著利用電漿處理，使用氫氣與氬氣1:1混合氣體，電漿功率25 W，基板溫度200 °C、工作壓力1 Torr條件下，電阻率由9.29×10-4 Ω-cm 下降至7.92×10-4 Ω-cm。
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