Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2959
標題: 射頻磁控濺鍍製備氧化鋅摻氟薄膜應用於薄膜太陽能電池之研究
Study of fluorine doped zinc oxide thin films prepared by RF magnetron sputtering for thin film solar cell applications
作者: 李沇憲
Lee, Yen-Hsien
關鍵字: sputtering;濺鍍;FZO;hydrogen plasma;solar cells;氧化鋅摻氟;氫電漿;太陽電池
出版社: 光電工程研究所
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摘要: 
Fluorine-doped zinc oxide (FZO) thin films were deposited on Corning 1737 glasses by RF magnetron sputtering. This study investigated effects of deposition parameters on properties of FZO thin films by changing sputtering power, substrate temperature and hydrogen content. The FZO thin films deposited at room temperature were subsequently treated by H2+Ar plasma. Effects of the post treatment on properties of FZO films were investigated. Finally, α-Si thin film solar cells were fabricated using the developed FZO films as window layers to study the influence of diluted hydrochloric acid (HCl) etching and the post treatment on properties of solar cells.
The prepared films had the lowest electrical properties (ρ=9.29×10-4 Ω-cm) and average optical transmittance of 90% in the wavelength range of 400-700 nm for the 650-nm-thick FZO thin films deposited with the RF power of 150 W at room temperature. After plasma treatment, the lowest resistivity was achieved under the conditions of RF power of 25 W, substrate temperature of 200 °C, and working pressure of 1 torr. The film resistivity decreased from 9.29×10-4 Ω-cm to 7.92×10-4 Ω-cm and the average optical transmittance was remained.
Furthermore, the process gases with various H2/(H2+Ar) ratios significantly affect the resistivity of FZO films. After process optimization, the lowest resistivity of 5.549×10-4 Ω-cm and average optical transmittance of 90% were obtained at the H2/(H2+Ar) ratio of 3%.
For diluted HCl etched films, the resistivity slightly increased and the surface morphology obviously became rougher. The haze ratio (400-700 nm) of the etched FZO films increased from 0.64% to 46.1% after 0.5% diluted HCl etching.
Finally, α-Si thin film solar cells were fabricated by using the 0.2%-HCl etched and plasma treated FZO film as the window layer. Its short-circuit current density, fill factor, and efficiency increased by 18%, 3%, and 20%, respectively, as compared to that using the as-deposited FZO films.

本研究使用射頻磁控濺鍍法沉積氧化鋅摻氟(ZnO:F, FZO)薄膜於康寧1737玻璃,以改變濺鍍功率、基板溫度與製程中氫氣(H2)含量的方式來探討濺鍍參數對FZO薄膜的影響,並且討論室溫沉積下之FZO薄膜經過氫電漿處理之後,對其表面形貌、結構、電性及光學特性做探討,最後搭配稀鹽酸(HCl)蝕刻表面,並製作成太陽能電池,以探討不同製程對光電轉換效率的影響。
FZO薄膜以射頻功率150 W,基板溫度為室溫,薄膜厚度650 nm條件下,可得到最佳光電特性表現的FZO薄膜,其電阻率為9.29×10-4 Ω-cm,可見光平均穿透率約為90%。接著利用電漿處理,使用氫氣與氬氣1:1混合氣體,電漿功率25 W,基板溫度200 °C、工作壓力1 Torr條件下,電阻率由9.29×10-4 Ω-cm 下降至7.92×10-4 Ω-cm。
此外,改變製程中氫氣/(氫氣+氬氣)的比例亦會影響FZO薄膜電阻率,經製程最佳化後發現,於氫含量為3%時,薄膜具有5.549×10-4 Ω-cm的低阻值表現,可見光平均穿透率約為90%。
在稀鹽酸蝕刻部分,蝕刻後薄膜的電阻率會稍微的上升且表面形貌明顯變粗糙,FZO薄膜經過0.5%稀鹽酸蝕刻後,在可見光區平均霧度(haze ratio)從0.64%增加到46.1%。
最後,將FZO製作成太陽能電池之視窗層,從結果可看出經過稀鹽酸蝕刻且經過電漿處理的FZO薄膜之太陽能電池可提升約18%的短路電流密度、約3%的填充因子和約20%的轉換效率。
URI: http://hdl.handle.net/11455/2959
其他識別: U0005-1308201101311200
Appears in Collections:光電工程研究所

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