Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2966
標題: 利用Sol-Gel方法製作AZO透明導電膜及其特性分析
Preparation and Characterization of AZO Transparent Conducting Films by Sol-Gel Method
作者: 張介佳
Chang, Chieh-Chia
關鍵字: sol-gel method;溶膠凝膠法;transparent conducting films;spin-coating;single crystal silicon particles;透明導電膜;旋轉塗佈;單晶矽粉
出版社: 光電工程研究所
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摘要: 
This thesis concerns the preparation of AZO transparent conducting films and single crystal silicon particle containing AZO transparent conducting films by sol-gel method. For the former, AZO transparent conducting films were prepared by spin-coating and followed N2 and 6%H2/Ar heat treatments .We investigate the effect of different process parameters ,like Al/Zn atomic ratio ,sol concentration , to collocate with different heat treatment atmosphere , thickness , on AZO transparent conducting films .By investigating the effect of different process parameters on AZO transparent conducting films , it was found that appropriate amount of Al atoms (0.5~1.5at%) doped in the ZnO film could reduce the resistivity of AZO film .On the other hand, appropriate sol concentration(0.5~0.75M) could enhance the conductivity of AZO film. The lowest resistivity is about 2×10-3Ω-cm after N2 and H2/Ar(6%)heat treatment . The UV/VIS spectra revealed that the transmittance of AZO transparent conducting films was higher than 85% in the visible region .
For the latter ,we use AZO colloid solutions mix with different ratio single crystal silicon particles, different resistivity single crystal silicon particles to study the optical property and conductivity of single crystal silicon particle containing AZO transparent conducting films after heat treatment .For the study on the preparation of single crystal silicon particle containing AZO transparent conducting films, it revealed that the lower mix ratio(0.05g/5ml,0.1g/5ml) of silicon particles the higher transmittance(80%,70%) was found .The lower resistivity of single crystal silicon particles the better conductivity of AZO film was found ,after the preparation of single crystal silicon particle containing AZO films .When the mix ratio was 0.05g/5ml ,the resistivity of silicon particles was 1.59×10-2Ω-cm , the transmittance of single crystal silicon particle containing AZO films was about 80% in the visible region, the resistivity was as low as 1.55×10-2Ω-cm .

本論文主要以溶膠凝膠法製備摻鋁氧化鋅(AZO)透明導電膜與含單晶矽粉AZO透明導電膜。前者主要為將摻鋁氧化鋅膠體溶液透過旋轉塗佈經氮氣及氫氬混和氣體(6% H2/Ar)熱處理後製得AZO透明導電膜,探討不同製程變因,如鋁摻雜量、溶液濃度、搭配不同退火氣氛、薄膜厚度,對AZO透明導電膜的影響。發現適度的鋁含量約(0.5~1.5 at%),可以改善其電阻係數,而適度的溶液濃度(0.5~0.75M)亦對薄膜電性有幫助。再配合H2/Ar(6%)熱處理後,可以讓AZO薄膜電阻係數降低至約2×10-3 Ω-cm。透過UV-VIS光譜儀分析,發現製成之AZO薄膜在可見光皆具有80 %以上良好的穿透率。
後者將AZO膠體溶液混摻不同比例與不同電阻係數的單晶矽粉,透過熱處理後,探討製得含單晶矽粉AZO透明導電薄膜在光學、電學性質上的影響。發現較低的混摻比例(0.05g/5ml、0.1g/5ml)有較高的穿透率(80 %、70 %,較高之混摻比例會使薄膜透光性不理想)。混摻電阻率越低的單晶矽粉(摻雜濃度越高的單晶矽粉),其製成之含單晶矽AZO薄膜有較好的電性。在低混摻比例(0.05g/5ml)與混摻低電阻係數(1.59×10-2 Ω-cm)的單晶矽粉狀態下,能夠製成在可見光區之穿透率約達80 %,電阻係數為1.55×10-2 Ω-cm之含單晶矽AZO薄膜。
URI: http://hdl.handle.net/11455/2966
其他識別: U0005-2906200916240700
Appears in Collections:光電工程研究所

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