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標題: Sputtering of Zinc Oxide: Aluminum (ZnO:Al) Transparent Conducting Oxide Films by DC+RF Power
作者: 陳錦洲
Chen, Jin-Zhou
關鍵字: sputter;濺鍍;AZO;Oxygen vacancy;dc;rf;摻鋁氧化鋅;氧缺陷;直流;射頻
出版社: 光電工程研究所
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以磁控直流 (DC)加上射頻(RF)濺鍍法製備摻鋁氧化鋅(AZO)透明導電薄膜。利用不同的製程變因,如RF功率及基板溫度的改變,再將其作6%氫/氬退火或泡水過程,比較不同變因與不同後處理對薄膜的影響。
將直流功率固定為80瓦,在射頻功率小於80瓦膜厚隨射頻功率瓦數提高而增加, 但在射頻功率為功率100與120瓦時可能因功率過強而使薄膜更為密實,降低薄膜鍍率。
薄膜經氫退火後,載子濃度及遷移率增加、電阻變小。能隙隨基板溫度增加變大。低溫沈積的薄膜經氫退火後載子濃度明顯增加使得電阻大大降低。基板溫度在300及325度時薄膜結構穩固,不因泡水而遭到破壞。250 ~300 度時薄膜經氫退火後,氧缺陷隨溫度增加而減少。

In this thesis, the aluminum doped ZnO transparent conducting films were prepared by introducing the direct current (DC) power and radio frequency (RF) power into the reactor simultaneously magnetic controlled sputtering method. We investigated the effects of different process parameters such as changing the RF sputtering power and substrate temperature. Then the AZO thin films were annealed in 6% H2/ Ar ambient or dipped into DI-water. The effects of post treatment of films on electrical characteristics, optical characteristics, structure and the composition were investigated.
We fix the DC power at 80W, the film's thickness increases with the increasing RF power before 80W, but decreases after 80W. This could be due to higher incident power make the film denser.
The carrier concentration, oxygen vacancy, mobility, and band-gap decrease after the substrate was dipped into the water. After annealing, the carrier concentration, mobility and oxygen vacancy increases, that decreases the resistivity. Band-gap of the film increases with the substrate temperature. Especially, the carrier concentrations for those films deposited at lower substrate temperature are increasing clearly. This lowers the resistivity greatly. The structure for those films deposited at 300 and 325 oC substrate temperature is stable, and was not destroy by the DI water. Therefore, the oxygen vacancy decreases with the substrate temperature after annealing.
The transmittance for different process parameters of the deposited film in the visible range are great than 80%. After H2/Ar annealing to improve the phenomenon of electrical behavior, films dip in the DI -water the peak of (002) and (004) orientation the relationship between the structure due to the destruction of water, except RF power 30W, substrate temperature of 300 and 325 degrees to maintain compared to the complete structure.
其他識別: U0005-1708201105272100
Appears in Collections:光電工程研究所

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