Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2971
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dc.contributor李敏鴻zh_TW
dc.contributorMin-Hung Leeen_US
dc.contributor陳奕君zh_TW
dc.contributorI-Chun Chengen_US
dc.contributor.advisor裴靜偉zh_TW
dc.contributor.advisorZingway Peien_US
dc.contributor.authorChou, Hui-Muen_US
dc.contributor.author周暉穆zh_TW
dc.contributor.other中興大學zh_TW
dc.date2012zh_TW
dc.date.accessioned2014-06-06T05:24:41Z-
dc.date.available2014-06-06T05:24:41Z-
dc.identifierU0005-2108201118083500zh_TW
dc.identifier.citation[1] 維基百科http://zh.wikipedia.org [2] 謝暐祥,「應用矽奈米柱製備有機/無機複合高分子太陽能電池」,國立中興大學,碩士論文,2009。 [3] 鄧旭軒,「以射頻磁控濺鍍法鍍製P型和N型微晶矽薄膜之研究」,國立中央大學,碩士論文,2008。 [4] O. Vetterl, F. Finger, R. Carius, P. Hapke, L. Houben, O. Kluth, A. Lambertz, A. Muck, B. Rech, H. Wagner, “Intrinsic microcrystalline silicon: A new material for photovoltaics”, Solar Energy Materials & Solar Cells 62, pages 97-108, 2000. [5] C.D. Park, H.Y. Kim, M.H. Cho, K.J. Jan, J.Y. Lee, “Solid-phase crystallization of hydrogenated amorphous silicon/hydrogenated microcrystalline silicon bilayers deposited by plasma enhanced chemical vapor deposition”, Thin Solid Film 359, pages 268-274, 2000. [6] 劉育誠,「以金屬誘發結晶法研製太陽能電池之低溫多晶矽薄膜」,國立雲林科技大學,碩士論文,2008。 [7] D. Dimova-Malinovska, O. Angelov, M. Sendova-Vassileva, M. Kamenova, J.C. Pivin, L. Pramatarova, “Polycrystalline silicon thin films obtained by Ni-induced crystallization on glass substrate”, Vacuum 76, pages 151–154, 2004. [8] Cheng-Chang Peng, Chen-Kuei Chung, Jen-Fin Lin, “Formation of microcrystalline silicon films using rapid crystal aluminum induced crystallization under low-temperature rapid thermal annealing”, Thin Solid Films 518, pages 6966–6971, 2010. [9] D. Dimova-Malinovska, O. Angelov, M. Sendova-Vassileva, “Polycrystalline silicon thin films obtained by Ni-induced crystallization on glass substrate”, Vacuum 76, pages 151–154, 2004. [10] Tae-kyung Kim, Gi-Bum Kim, Yeo-Geon Yoon, Chang-Hoon Kim, Byung-Ii Lee and Seung-Ki Joo, “Scanning rapid thermal annealing process for poly-Silicon thin film transistor”, Appl. Phys. Lett. Vol. 39, pp 5773-5775, 2000. [11] Ali Khakifirooz, Saber Haji, S. Shamsoddin Mohajerzadeh, “UV-assisted nickel-induced crystallization of amorphous silicon”, Thin Solid Films 383, 241-243, 2001. [12] Hyeongnam Kim*, Daewon Kim, Gyuyul Lee, Dongseop Kim, Soo Hong Lee, “Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface”, Solar Energy Materials & Solar Cells 74, 323–329, 2002. [13] Oliver Nast, Stephan Brehme, Dirk H. Neuhaus, and Stuart R. Wenham,“Polycrystalline Silicon Thin Films on Glass by Aluminum-Induced Crystallization”, IEEE Trans. On Electron Devices, VOL. 46, NO. 10, OCTOBER 1999. [14] 郭啟全、葉文昌、陳佳斌、鄭正元,“XeF準分子雷射退火自動操控系統研發”,Proceedings of 2005 CACS Automatic Control Conference. [15] G. K. Giust and T. W. Sigmon, “High-performance thin-film transistors fabricated using excimer laser processing and grain engineering”, IEEE Trans. On Electron Devices, VOL. 45, NO. 4, APRIL 1998. [16] M. Cao, S. Talwar, K. J. Kramer, T. W. Sigmon, and K. C. Saraswat, “A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films”, IEEE Trans. On Electron Devices, VOL. 43, Pages 561, 1996. [17] 管鴻、楊茹媛、翁敏航、吳春森、徐政傑、孫嘉鴻,“鋁/矽膜厚比對誘發多晶矽之成長機制與結晶性之影響”,南台科技大學光電工程學系、屏東科技大學材料工程學系、金屬工業研究發展中心。 [18] Mihyun Yoon, Kyungtaek Im, Jahyun Yang, Sangwoo Lim, “Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process”, Physica B 405, 1526–1531, 2010.zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/2971-
dc.description.abstractIn this research, we mainly investigated the influence of Aluminum-induced crystallization(AIC) on Silicon thin film as a material for solar cell. We fabricated microcrystalline Silicon thin film by Aluminum-induced crystallization therefore we could further discuss the effects of crystallinity of Silicon thin film by different parameters, such as annealing time、thickness of Silicon thin film and Aluminum. In addition, we discuss the effects of Silane(SiH4) flow during deposition on electrical properties and microstructure of the microcrystalline Silicon thin film. So we can consider whether it would be proper for solar cell after optic and electric measurement.zh_TW
dc.description.abstract在本篇論文中,我們主要探討鋁誘發結晶對矽薄膜的影響,並作為材料應用於太陽能電池上。即利用誘發結晶法使非晶矽薄膜結晶化形成微晶矽,進一步探討不同參數如:熱退火時間、矽薄膜厚度、金屬鋁厚度等,對矽薄膜結晶性之影響。另外,透過調變SiH4流量並以SEM觀察其鋁誘發結晶後之微結構變化,並藉由光學或電性量測,反應材料應用於太陽能電池上的適當性。zh_TW
dc.description.tableofcontents致謝 i 中文摘要 ii Abstract iii 目錄 iv 表目錄 vi 圖目錄 vii 第一章 緒論 1 1-1 前言 1 1-2 太陽能電池簡介 2 1-3 太陽能電池種類 3 1-4 微晶矽薄膜太陽能電池 5 1-5 研究動機 6 第二章 文獻回顧 7 2-1 多晶矽退火結晶方法 7 2-2 鋁誘發結晶法之原理 8 2-3 快速鋁誘發結晶法低溫製備微晶矽薄膜 9 第三章 實驗方法及實驗儀器介紹 11 3-1 實驗材料 11 3-2 實驗流程 11 3-2-1 前置作業:玻璃試片清洗 12 3-2-2 以PECVD成長非晶矽(α-Si:H) 12 3-2-3 鋁誘發結晶 13 3-2-4 元件製作 13 3-3 製程設備及量測儀器 14 3-3-1 電漿增強式化學氣相沉積(Plasma-Enhanced CVD) 14 3-3-2 熱蒸鍍機(Thermal evaporator) 15 3-3-3 爐管(Furnace) 16 3-3-4 拉曼光譜儀(Raman spectroscopy) 17 3-3-5 X光繞射儀(X-ray diffraction) 18 3-3-6 場發射掃描式電子顯微鏡(FESEM) 19 3-3-7 霍爾量測(Hall measurement) 20 3-3-8 展阻量測系統(Spreading resistance probe system) 21 3-3-9 紫外線可見光光譜儀(UV-VIS) 22 第四章 結果與討論 23 4-1 鋁誘發結晶法製備微晶矽 23 4-2 光學量測 32 4-3 電性量測 34 4-4 SEM量測 37 4-5 太陽能電池量測 45 第五章 結論與未來展望 47 5-1 結論 47 5-2 未來展望 47 參考文獻 48 附錄 51zh_TW
dc.language.isoen_USzh_TW
dc.publisher光電工程研究所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2108201118083500en_US
dc.subjectAluminum induced crystallizationen_US
dc.subject鋁誘發結晶zh_TW
dc.subjectSolar cellen_US
dc.subject太陽能電池zh_TW
dc.title鋁誘發再結晶法製備太陽能電池用之微晶矽薄膜之研究zh_TW
dc.titleStudy on the properties of Aluminum-induce crystallized microcrystalline silicon thin films for solar cell applicationen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
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