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|標題:||Stress Analysis and Carrier Mobility Calculation of InGaAs MOSFETs
|關鍵字:||InGaAs;砷化銦鎵;MOSFETs;Stress Analysis;Carrier Mobility;金氧半場效電晶體;通道應力;遷移率||出版社:||光電工程研究所||引用:|| R. H. Dennard, F. H. Gaensslen, H. N. Yu, V. L. Rideout, E. Bassous, and A. R. Leblanc, “Design of ion-implanted MOSFET's with very small physical dimensions,” Proceedings of the IEEE, vol. 87, no. 4, 1999.  Donald Cheng, Chichih Liao, K.Y. Cheng, and Milton Feng, “Process development and characteristics of nano III-V MOSFET,” CS MANTECH Conference, April 14-17, 2008.  T. W. Kim, D. H. Kim and J. A. del Alamo, “30 nm In0.7Ga0.3As inverted-type HEMTs with reduced gate leakage current for logic applications,” Electron Devices Meeting IEDM 2009 IEEE International, pp. 1-4, 2009.  Y. Liu, H. S. Pal, M. S. Lundstrom, D. H. Kim, J. A. del Alamo, and D. A. Antoniadis, “Device physics and performance potential of III-V field-effect transistors,” book chapter in "Fundamental of III-V Semiconductor MOSFETs," S. Oktyabrsky and P. D. Ye (editors), Springer Science, pp. 31-49, 2010.  H. C. Chin, X. 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Liu, “Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors,” Applied Phys. Lett., Vol.91, pp.102103-1-3 ,2007.  S. Maikap, M. H. Lee, S. T. Chang, and C.W. Liu, “Characteristics of strained-germanium p- and n-channel field effect transistors on Si (111) substrate,” Semiconductor Science and Technology, Vol.22, pp.342-347, 2007.  S. T. Chang, H.-S. Tsai, and C.Y. Kung, “Strained Si channel NMOSFETs using a stress with Si1-yCy Source and Drain stressors,” Thin Solid Films, Vol.508, pp.333-337, 2006.||摘要:||
III-V materials will be the potential candidates to replace Si in the future CMOS technology. Recently, the strained InGaAs n-MOSFET with S/D Stressors was demonstrated for the first time. In this thesis, we will study the performance of strained InGaAs MOSFETs with S/D Stressor using stress simulation and mobility calculation. This thesis is organized as following: First, we will briefly introduce the overview of III-V materials and transistors in Chapter 1. Electron mobility calculation for InGaAs MOSFET will be given in Chapter 2. Stress simulations for n-MOSFET and p-MOSFET are studied in Chapter 3. In Chapter 4, we propose a new analytical model for channel stress in InGaAs MOSFET with S/D Stressors. Finally, the summary will be concluded in Chapter 5.
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