Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2977
標題: Study on the Through-Glass-Via Formation by Photo-Chemical Etching for 3D IC Application
光化學蝕刻應用於玻璃導通孔之3D IC研究
作者: 孫瑞伯
Sun, Jui-Po
關鍵字: 3D IC;3D IC;Through Glass Via;Photo-chemical Etching;玻璃導通孔;矽穿孔;高選擇比
出版社: 光電工程研究所
引用: [1]Rao R. Tummala, Venky Sundaram, Ritwik Chatterjee, P. Markondeya Raj, Nitesh Kumbhat, Vijay Sukumaran,Vivek Sridharan, Abhishek Choudury, Qiao Chen and Tapobrata Bandyopadhyay, “Trend from Ics to 3D Ics to 3D Systems”, IEEE 2009 Custom Intergrated Circuits Conference (CICC), 439-444, 2009 [2]“Market trends for 3D stacking”, Yole Development, June 2007 http://www.emc3d.org/documents/library/marketAnalysis_3D/YOLE3D%20IC.pdf [3]唐經洲, 「3D IC設計簡介」, STC/ITRI, 2009 [4]Jian-Qiang Lu, “3D Hyperintegration and Packaging Technologies for Micro-Nano Systems” Proceedings of the IEEE, 97, 18-30, 2009 [5]Makoto Motoyoshi, “Through-Silicon Via (TSV)”, Proceedings of the IEEE, 97, 43-48, 2009 [6]游淑惠,「台灣半導體發展新紀元 – 3D IC」,SoC Technical Journal, 系統晶片 009期,頁次 3-10 [7]Venky Sundaram, “Silicon & Glass Interposer (SIGI) Applications”, Georgia Institute of Technology Package Research Center, 2011 [8]Tapobrata Bandyopadhyay, “MODELING, DESIGN, AND CHARACTERIZATION OF THROUGH VIAS IN SILICON AND GLASS INTERPOSERS”, Georgia Institute of Technology, Dec 2011 [9]Venky Sundaram, “Glass and Silicon Packages Webinar”, Georgia Institute of Technology 3D-System Packaging Research Center, 2010 [10]S. Spiesshoefer, Z. Rahman, G. Vangara, S. Polamreddy, S. Burkett, and L. Schaper, “Process integration for through-silicon vias”, American Vacuum Society J. Vac. Sci. Technol. A, Vol. 23, No. 4, 824-829, 2005 [11]“ DRIE for Through Silicon Via” , Alcatel– EMC 3D Workshop, 2008 [12]Vijay Sukumaran, Qiao Chen, Fuhan Liu, Nitesh Kumbhat, Tapobrata Bandyopadhyay, Hunter Chan, Sunghwan Min, Christian Nopper*, Venky Sundaram, and Rao Tummala, “Through-Package-Via Formation and Metallization of Glass Interposers “, 2010 Electronic Components and Technology Conference, 557-563, 2010 [13]Vijay Sukumaran, Tapobrata Bandyopadhyay, Qiao Chen, Nitesh Kumbhat, Fuhan Liu, Raghu Pucha, Yoichiro Sato,Mitsuru Watanabe, Kenji Kitaoka, Motoshi Ono, Yuya Suzuki, Choukri Karoui, Christian Nopper, Madhavan Swaminathan, Venky Sundaram and Rao Tummala, “Design, Fabrication and Characterization of Low-Cost Glass Interposers with Fine-Pitch Through-Package-Vias”, IEEE 2011 Electronic Components and Technology Conference, 583-588, 2011 [14]T. R. Dietrich, W. Ehrfeld, M. Lacher, M. Kraemer, and B.Speit, “Fabrication technologies for microsystems utilizing photoetchable glass”, Microelectron. Eng. 30, 497–504, 1996 [15]Michael Kosters, Hung-Te Hsieh, Demetri Psaltis, and Karsten Buse, “Holography in commercially available photoetchable glasses”, Optical Society of America. APPLIED OPTICS. Vol. 44, No. 17, 3399-3402, 2005 [16]Dai Ye, Qiu Jian-Rong, “The photosensitive effect of Ce on the precipitation of Ag nanoparticles induced by femtosecond laser in silicate glass”, Chin. Phys. Soc. and IOP Publishing Ltd. Vol 18 No 7,2858-2863, 2009 [17]YinzhongWu, Wei Jia, Ching-yue Wang, Minglie Hu, Xiaochang Ni, Lu Chai, “Micro-hole fabricated inside FOTURAN glass using femtosecond laser writing and chemical etching”, Opt Quant Electron 39,1223, 2007 [18]“Corning EAGLE XG AMLCD Glass Substrates Material Information”,Corning Incorporated MIE 301 1-3, 2006 [19]“D 263 ecoT - Thin Glass”, Schott AG 1-9, 2008 [20]“FOTURAN- a photostructurable glass“, mikroglas chemtech GmbH (www.mikroglas.com)
摘要: 
Integration of IC chips vertically, named 3-D integration, is an important technology direction to increase packing density, reduce route for signal propagation and hence increase the functionality and clock rate. Current technologies use through-silicon-via to achieve 3-D integration. The high cost of Si, processing and the poor electrical isolation are main problems restricting the realization of 3-D technology. With the use of through-glass-via (TGV) could potentially solve those problems. Besides, optical transparent and chemical-resistant of glass enable the possibility of 3-D ICs having optical modulation and chemical sensing function. However, formation of through-glass-via by dry etching needs high-cost equipment at a long etching time. Drill holes by high energy laser looks a suitable method. The formation of micro-cracks at the surface of glass via and along with via by the laser will cause the electrical fail that limit the application of TGV. In this work, we utilize a photo-chemical etching (PCE) method to form through-glass-via. The PCE is a low cost, damage-free and potentially large-area method for TGV formation. An ultra-violet (355 nm) pulse laser was used to illuminate the glass surface. The illuminated region will crystallize after thermal annealing in a furnace. The crystalized glass shows much faster etching rate than the amorphous region in HF solution. For a relatively thick (600 nm) glass, a via-hole with diameter of around 50μm was demonstrated in laser energy of 6J/cm2. In comparison, at least 120 J/cm2 was required to drill a glass directly. In addition, a 40 selectivity was achieved to the crystallized and amorphous region.

為了提升大型積體電路晶片的性能,同時限制他們的功率消耗,將晶片(chip)視為一個電晶體所引發的三維大型積體電路結構(3D IC),是一種較可靠且能從基本解決問題的方法。矽穿孔(Through silicon via , TSV)是3D IC的一支,並是其中一種技術的統稱。將晶片連接在一起的載板,可以是矽晶片、高分子薄膜、金屬、甚至是玻璃。Silicon 的確比organic及Metal優秀,但是也有電訊號隔離及成本上的大問題。相對來說,玻璃在各方面都極為優秀,只有在製作深溝上有製程的困難性,主要是蝕刻方式太慢。數種方式最近被驗證來製作玻璃導通孔(Through Glass Via , TGV )。包含CO2 Laser、UV Laser、Excimer Laser及Mechanical Drilling。但是,不是尺寸太大、速度太慢就是會造成材料毀損。在此一計畫中,我們發展利用紫外光雷射照射後,加熱使玻璃結晶性變化的方式來達成局部蝕刻率變化。在HF中,結晶部份濕蝕刻率增加,達到高選擇比40:1以上。
URI: http://hdl.handle.net/11455/2977
其他識別: U0005-2612201116412700
Appears in Collections:光電工程研究所

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