Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2980
標題: 應用於太陽能電池之氧化鋅摻鈦薄膜特性之研究
Study on characteristics of ZnO:Ti thin films for solar cell applications
作者: 劉豐嘉
Liu, Feng-Jia
關鍵字: sputtering;濺鍍;TZO;H+Ar plasma;solar cell;氧化鋅摻鈦;氫氬電漿;太陽電池
出版社: 光電工程研究所
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摘要: 
本研究利用射頻磁控濺鍍系統沉積氧化鋅摻鈦(TZO)薄膜於康寧1737玻璃,以氬氣做為濺鍍氣體,透過改變射頻功率、基板溫度、薄膜厚度探討濺鍍參數對TZO薄膜的影響,之後並將沉積後的薄膜做氫氬電漿後處理,研究其對薄膜電性、光學特性與結構的影響。最後透過稀鹽酸蝕刻處理,製作薄膜太陽能電池。
首先前製程部分,以射頻功率50 W,基板溫度300 ℃,薄膜厚度800 nm,可以得到最佳的電性與光學特性表現的TZO薄膜,其最低阻值為2.52×10-3 Ω-cm,可見光區平均穿透率為85%。
在氫氬電漿後處理部分由改變電漿功率40 W至100 W與氬氫氣體混合比,固定基板溫度300 ℃、壓力1 Torr,結果顯示80 W,氫氬比1:1有最佳電性表現為1.6×10-3 Ω-cm,可見光區平均穿透率為87%。
濺鍍沉積的薄膜經過氬氫電漿後處理可使薄膜特性獲得明顯改善,氫氣以淺層施體的形式進入薄膜裡提供自由電子使薄膜載子濃度提高,因此使電性得以提升。最後以0.3%稀鹽酸蝕刻製作texture,與FTO和經過退火後處理的TZO薄膜,製作三種不同的薄膜太陽能電池比較其特性差異。

In this study, titanium-doped zinc oxide (TZO) thin films were deposited on Corning 1737 glass with RF magnetron sputtering system. We investigated the effects of deposition parameters on TZO thin films by changing the sputtering power, glass substrate temperature and the thickness of films. The TZO thin films were treated by H2+Ar plasma, and then investigated the effect of post treatment of films on electrical properties, optical properties and structure. Finally, we made a discussion on the cell performance by adopting TZO films with diluted hydrochloric acid etching surface as the front contact of thin film solar cell.
The prepared films had excellent electrical properties (ρ=2.52×10-3Ω-cm) and average optical transmittance 85% in the wavelength range of 400-700 nm for the TZO thin films deposited with the RF power of 50 W, the substrate temperature of 300 ℃ and the thickness of 800 nm.
Following the sputtering step, we also investigated the effects of the RF power from 40 W to 100 W and the different H2/(Ar+H2) ratio ranging from 0% to 100% for Ar+H2 plasma treatment. The lowest resistivity 1.6×10-3 Ω-cm and optimized average transmittance 87% were achieved for the RF power of 80 W and H2/(Ar+H2) ratio of 50%.
In addition, the post treatment of TZO films by using Ar+H2 plasma in PECVD was investigated. From the post treatment method, the resistivity of films was improved. It is believed that hydrogen atoms diffuse into the thin films and play as shallow donors to increase the conductivity of the thin films. The TZO films were then etched with dilute hydrochloric acid (0.3% HCl in H2O) compared with FTO and post-annealing of TZO thin films on solar cells.
URI: http://hdl.handle.net/11455/2980
其他識別: U0005-2308201014131700
Appears in Collections:光電工程研究所

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