Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2996
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dc.contributor林光儀zh_TW
dc.contributorKuang-I Linen_US
dc.contributor.author徐嘉鴻zh_TW
dc.contributor.authorHsu, Chia-Hungen_US
dc.contributor.other光電工程研究所zh_TW
dc.date2013en_US
dc.date.accessioned2014-06-06T05:24:47Z-
dc.date.available2014-06-06T05:24:47Z-
dc.identifierU0005-2608201312184500en_US
dc.identifier.citation[1] 李銘其, Photoluminescence Study of Self-assembled InAs/GaAs Quantum Dots Grown by Hydrogen-assisted Molecular Beam Epitaxy (2011). [2] 徐嘉鴻,中華民國物理學會,物理雙月刊(廿六卷二期)2004年4月。 [3] Katkov, C. C. Wang, J. Y. Chi, C. Cheng, A. K. Gutakovskii, Optical property improvement of InAs/GaAs quantum dots grown by hydrogen-plasma-assisted molecular beam epitaxy, J. Vac. Sci. Technol. B, 29, 3(2011). [4] Sugiyama, Hiroki et al. Photoreflectance study of thermal degradation of n-InP/p+-InGaAsheterojunctions,89,7 (2001). [5] R. Kudrawiec et al. Photoreflectance and contactless electroreflectance spectroscopy of GaAs-based structures: The below band gap oscillation features ,253, 266 (2006). [6] 陳俊呈, Study of the Interfacial Properties of Oxide-GaAs Heterostructures by Photoreflectance Spectroscopy (2001). [7] 林承彥, Spectroscopy study of InAs/GaAs quantum dots on the tilted substrate (2005). [8] 李鈞耀, Photoreflectance Studies of the Surface Property of InAlAs Surface-Intrinsic-P+ structures(2004). [9] 陳香妤,應力緩衝層對砷化銦量子點侷限能階之影響(2004)。 [10] 沈志霖,半導體異質結構之光學研究(2002)。 [11] M. H. Hadj Alouane, B. Ilahi, L. Sfaxi,H. Maaref, InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic, 13:5809 (2001). [12] M. J. Steer, D. J. Mowbray, W. R. Tribe, M. S. Skolnick, and M. D. Sturge, Phys. Rev. B, 54(24), 1996, p.17738. [13] R. J. Warburton, C. S. Durr, K. K.arrai, J. P. Kotthaus, G. Medeiros-Riberiro, and P. M.Petroff, Phys. Rev. Letts., 79(26), 1997, p.5282. [14] L. Aigouy, T. Holden, F. H. Pollak, N. N. Ledentsov, W. M. Ustinov, P. S. Kop’ev, and D. Bimberg, Appl. Phys. Lett.,70(25),1997, p.3329. [15] G. L. Rowland, T. J. Hosea, S. MailK, D. Childs, and R. Murray, Appl. Phys. Lett., 73(22), 1998, p.3268. [16] T. M. Hsu, W. -H. Chang, K. F. Tsai, J. -I. Chyi, N. T. Yeh, and T. E. Nee, Phys. Rev. B, 60(4), 1999, p.R2189. [17] S. H. Pan, H. Shen, Z Hang, F. H. Pollak, W. Zhuang, Q. Xu, A. P. Roth, R. A. Masut, C. Laceele, and D.Morris, Phys. Rev. B, 38(5), 1988, p.3375. [18] R. Leon, P. M. Petroff, D. Leonard, S. Fafard, Science, 267, 1995, p.1966. [19] Q. D. Zhuang, J. M. Li, Y. P. Zeng, L. Pan, H. X. Li, M. Y. Kong, and L. Y. Lin, J. Crystal Growth, 200, 1999, p.375.en_US
dc.identifier.urihttp://hdl.handle.net/11455/2996-
dc.description.abstract本論文利用光調制光譜研究氫原子輔助分子束磊晶成長InAs/GaAs量子點之光學特性。A. V. Katkova等人在2011年所發表的一篇論文,其探討主題是利用Hydrogen-plasma-assisted molecular beam epitaxy成長InAs/GaAs量子點結構,研究氫原子對量子點發光品質的改善。該論文證實在製程過程中加入氫原子可以降低非輻射複合中心(Nonradiative recombination centers),進而大幅改善InAs/GaAs量子點的螢光強度,然而在InAs/GaAs量子點的螢光光譜實驗中並沒有直接證據去證實GaAs能障層加入氫原子後與缺陷改善之關係,因此我們對此樣品進行改變激發光強度之光調制光譜實驗,探討氫原子與GaAs能障層缺陷改善之關係。 另外,我們使用不同波長的激發光源探討干涉訊號的增減,並在光調制光譜中獲得量子點的訊號,並利用Origin軟體擬合找出訊號中量子點的能量位置,並與螢光光譜的實驗結果相互比較。zh_TW
dc.description.abstractThis thesis mainly uses photoreflectance method to study the optical property of InAs/GaAs quantum dots, which are grown by hydrogen-assisted molecular beam epitaxy. A. V. Katkova et al. in 2011 published a thesis which mainly discusses the InAs/GaAs quantum dots structure and studies how to improve the optical efficiency. It proves that if we add hydrogen atoms during the process of growing GaAs bulk, the nonradiative recombination centers are decreased, and it could largely increase the PL intensity in InAs/GaAs structure .However, there is no direct evidence to prove the relation between adding the hydrogen atoms and the defect density in the InAs/GaAs quantum dots, therefore photoreflectance is used to study this issue. In addition, we use the pump beams with different wavelengths to excite the samples to study the variations of oscillation features. After this treatment, the quantum dots signals of PR spectra were observed, then we use Origin software to fit the QD signals, which correspond to the quantum dots emission in the PL spectra.en_US
dc.description.tableofcontents中文摘要 I Abstract II 目錄 III 表目錄 V 圖目錄 VI 第一章 緒論 1 1-1 奈米材料介紹 1 1-2 量子效應 1 1-3 雷射二極體 2 1-4 量子點 2 1-5 半導體缺陷 6 1-6 文獻回顧 7 第二章 光譜學 8 2-1 光譜學介紹 8 2-2 光調制光譜 8 2-2-1 調制光譜 8 2-2-2 低電場調制 10 2-2-3 Franz-Keldysh振盪 11 2-2-4 光調制的過程 14 2-2-5 譜線的擬合 17 2-3 光激發螢光光譜 18 第三章 以變光強度方法研究材料缺陷改善度之實驗結果與分析 20 3-1 樣品結構 20 3-2 研究動機 23 3-3 實驗過程與說明 23 3-3-1 文獻回顧與參考樣品 23 3-3-2 實驗過程與分析 25 第四章 具表面量子點樣品之光譜分析與比較 34 4-1 1.25eV前段之PR分析 37 4-1-1 8-series之量子點訊號分析 37 4-1-2 10-series之量子點訊號分析 43 4-2 1.25eV後段之PR分析 46 第五章 結論 48 參考文獻 49zh_TW
dc.language.isozh_TWen_US
dc.publisher光電工程研究所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2608201312184500en_US
dc.subject光調制光譜zh_TW
dc.subjectPhotoreflectance spectrumen_US
dc.subject干涉震盪zh_TW
dc.subject量子點zh_TW
dc.subject缺陷zh_TW
dc.subject變光強度zh_TW
dc.subjectInterference oscillationen_US
dc.subjectQuantum dotsen_US
dc.subjectDefecten_US
dc.subjectVariable pump beam intensityen_US
dc.title光調制光譜研究氫原子輔助分子束磊晶成長InAs/GaAs量子點之光學特性zh_TW
dc.titlePhotoreflectance Study of Optical Property of InAs/GaAs Quantum Dots Grown by Hydrogen-assisted Molecular Beam Epitaxyen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1zh_TW-
item.grantfulltextnone-
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