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Study on a-IGZO/Pentacene thin film transistors for flexible complementary inverter
|關鍵字:||可撓式;flexible;互補式反相器;非晶銦鎵鋅氧化物;並五苯;complementary inverter;a-IGZO;Pentacene||出版社:||光電工程研究所||引用:|| Christopher R. Newman, C. Daniel Frisbie, Demetrio A. da Silva Filho, Jean-Luc Bredas, Paul C. Ewbank, and Kent R. Mann,“Introduction to organic thin film transistors and design of n-channel organic semiconductors,” Chemistry of materials, vol. 16, pp. 4436-4451, 2004.  C. D. Dimitrakopoulos, D. J. Mascaro, “Organic thin-film transistors: A review of recent advances,” IBM journal of research and development, vol. 45, pp.11-27, 2001.  N. K. Patel, S. Cinà, and J. H. Burroughes, “High-efficiency organic light-emitting diodes,” IEEE Journal on selected topics in quantum electronics, vol. 8, pp.346-361, 2002.  Y. Y. Lin, D. J. Gundlach, S. F. Nelson, T. N. Jackson, “High-mobility pentacene-based organic thin film transistors,” IEEE electronic device letters, vol. 18, pp. 60-61, 1997.  Ioannis Kymissis, C. D. 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Hwang, and Seongil Im,“Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate,” Applied Physics Letters, vol. 93, pp. 033510, 2008.||摘要:||
本論文中，利用交聯後之PVP：PMF薄膜作為絕緣層，吾人提出於塑膠基板(PEN)上製作包含P通道Pentacene 薄膜電晶體及N通道a-IGZO薄膜電晶體之互補式反相器。其中，P通道與N通道電晶體具有平衡的電特性，於14V下，反相器轉換電壓為供給電壓之0.5倍，其值為7.06 V，信號增益為8.4V/V。此外，吾人所製作之反相器於撓曲後，其元件為撓曲半徑4 mm，亦可得到轉換電壓為供應電壓之0.5倍，其值為7.11 V，信號增益為8.58V/V。故可知吾人所製作之互補式薄膜電晶體反相器，可適用於軟性邏輯電路之應用。
Research efforts devoted to hybrid based microelectronic and optoelectronic devices have grown significantly in recent years. The advantages of hybrid based devices are low processing temperature which is compatible with the plastic substrates, simple processing procedure that is potentially low cost, and solution process that could be produced in large area.
In this study, a Low temperature process thin film transistor was accomplished by using a cross-linked polymer. The Crosslinks which made by Polyvinylphenol (PVP) and Poly(melamine-co-formaldehyde)(PMF) by using UV light to control the crosslinking reaction as the gate dielectric. By utilizing this polymer as gate dielectric, pentacene based organic thin-film transistor could be operated at 30V and a-IGZO based amorphous oxide thin-film transistor could be operated at 10V. Furthermore, the coating and cross-linking process of ultrathin PVP ensure that this technique is potentially compatible with the large area printing methods such as inkjet printing and doctor blade coating. The cross-linked polymer dielectric is therefore a good candidate for OTFT in large area printed flexible electronic applications.
We demonstrated an organic/inorganic complementary inverter composed of p channel Pentacene and n channel a-IGZO thin film transistors on plastic substrate(PEN) by utilizing the cross-linked PVP and PMF as dielectrics. This two types of transistors exhibit balanced performance. The inverter has good performance with switching voltage around half of supply voltage which is 7.06V and signal gain of 8.4 V/V at 14V and its components under the bending radius of 4mm. Also we characterize the inverter after bending , the inverter has switching voltage around half of supply voltage which is 7.11V and signal gain of 8.58 V/V , that indicates it is suitable for flexible logic application.
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