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標題: 大尺寸晶圓針測卡的熱變化與針痕研究
Study on the temperature-related high pin count probe card thermal movement and probe-mark
作者: 張文華
Chang, Wen-Hua
關鍵字: 探針卡;Probe card;針測卡;針痕;溫度曲線;3D針痕補償;probe mark;scrub mark;thermal movement curve;3D probing offset
出版社: 光電工程研究所
引用: [1] 鄭芳茂, ”溫控環境下之晶圓針測實驗方法與不同探針材質對銲墊刮痕之分析”,中正大學機械工程研究所碩士論文,2006。 [2] 李宜璋,”高速高頻多晶片探針卡微探針電氣特性之設計、模擬與製造”,成功大學微電子所碩士論文,2004。 [3] Klaus Giringer and Gunther Boehm, “Another step on the way to full wafer probing”, IEEE Semiconductor Wafer Test Workshop, pp.3-4, 2003. [4] 旺矽科技股份有限公司,”MJC probe card training data”, 2011. [5] 美商福達電子股份有限公司,”FFI probe card training data”, 2011. [6] 周敏傑、陳明良、蔡禎輝、吳東權,”先進高密度探針卡技術”,機械工業雜誌318期,pp.4-5,2009。 [7] Hotchkiss, G, Ryan, G, Subido, W, Broz, J, Mitchell, S, Rincon, R, Rolda, R and Guimbaolibot, L, “Effects of probe damage on wire bond integrity”, IEEE Electronic Components and Technology Conference, pp.1175-1180, 2001. [8] Sauter, W, Aoki, T, Hisada, T, Miyai, H, Petrarea, K, Beaulied, F, Allard, S, Power, J and Agbesi, M, “Problems with wirebonding on probe marks and possible solutions,” IEEE Electronic Components and Technology Conference, pp.1350-1358, 2003. [9] 徐健忠,”探針卡品質控制法於晶圓測試之研究”,中華大學電機工程研究所碩士論文,2001。 [10] John T. Strom, “Method of applying the analysis of scrub mark morphology and location to the evaluation and correction of semiconductor testing, analysis and manufacture“, United States Patent Application Publication, US 2010/0305897 A1, 2010. [11] Otto Weeden, “Probe Card Tutorial”, Keithley Instruments, Inc., 2003. [12] Cameron Harker, Jeff Lin, Stuart Pearce, “Improving Scrub Performance and Reducing Soak Time with a New Mechanism to Stabilize Probe Card Temperature”, IEEE Semiconductor Wafer Test Workshop, pp.6-17, 2009. [13] 白安鵬,”半導體積體電路測試概論”,pp.38-54,2008。 [14] 漢民測試股份有限公司,”TEL prober operation training guide”, pp.14-15, 2006. [15] 漢民測試股份有限公司,”HTSI presentation for cobra probe card”, pp.8-9, 2010. [16] 日商台灣傑睦股份有限公司,”Vertical contact probe card VC series”, pp.7-11, 2006. [17] Boehm, GmbH, “Large area probing meets small pitch”, IEEE Semiconductor Wafer Test Workshop, pp.3-4, 2005. [18] 曹育誠,”錫鉛凸塊晶圓之針測影響研究與分析”,南台科技大學電子工程研究所碩士論文,2004。 [19] 鄒慶福、賴騰憲,”微機電陣列式晶圓探針卡”,逢甲大學產學合作成果專刊,pp.121-123,2009。 [20] Jerry J. Broz and Reynaldo M. Rincon, “Probe contact resistance variations during elevated temperature wafer test”, IEEE International Test Conference, pp.396-405, 1999. [21] Maekawa, S and Takemoto, M, “Highly reliable probe card for wafer testing”, IEEE Electronic Components and Technology Conference, pp.1152-1156, 2000. [22] Sunil Wijeyesekera, “One touch 300mm wafer probing”, IEEE Semiconductor Wafer Test Workshop, pp.4-18, 2006. [23] TOKYO ELECTRON LIMITED, “Fully automatic wafer prober model:P-8, 3D probing offset operation manual”, 2001. [24] 美商福達電子股份有限公司, “TMPC2 setup on TEL prober”, 2010.

Probe card using for front-end wafer testing that getting probe mark by probe tip contact with bonding pad and also getting property and yield of circuit in high or low temperature environment. Since the progress of wafer process to make pad size getting smaller and more DUT quantity on probe card, it’s caused that difficult to control the position and size of probe mark.
This purpose of research is to improve the probe mark issue that impact the stability of testing yield and reliability of packaging, even shorten the life of probe tip. This research consist of two parts, the first part is monitor the thermal movement curve of probe card under temperature controlled on prober to know when the needle height is stable, the second part is monitor probe mark variation by change the related parameter, for example, SET UP time, prober head plate planarity, needle alignment pins selection, 3D probing function.
This achievement is getting the optimal setting to handle the probe mark problem and also gaining maximum capacity in the production line, relatively speaking, it’s also reduce the waste of manpower.
其他識別: U0005-1508201214571600
Appears in Collections:光電工程研究所

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