Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/3002
DC FieldValueLanguage
dc.contributor裴靜偉zh_TW
dc.contributorZingway Peien_US
dc.contributor.author張文華zh_TW
dc.contributor.authorChang, Wen-Huaen_US
dc.contributor.other光電工程研究所zh_TW
dc.date2012en_US
dc.date.accessioned2014-06-06T05:24:49Z-
dc.date.available2014-06-06T05:24:49Z-
dc.identifierU0005-1508201214571600en_US
dc.identifier.citation[1] 鄭芳茂, ”溫控環境下之晶圓針測實驗方法與不同探針材質對銲墊刮痕之分析”,中正大學機械工程研究所碩士論文,2006。 [2] 李宜璋,”高速高頻多晶片探針卡微探針電氣特性之設計、模擬與製造”,成功大學微電子所碩士論文,2004。 [3] Klaus Giringer and Gunther Boehm, “Another step on the way to full wafer probing”, IEEE Semiconductor Wafer Test Workshop, pp.3-4, 2003. [4] 旺矽科技股份有限公司,”MJC probe card training data”, 2011. [5] 美商福達電子股份有限公司,”FFI probe card training data”, 2011. [6] 周敏傑、陳明良、蔡禎輝、吳東權,”先進高密度探針卡技術”,機械工業雜誌318期,pp.4-5,2009。 [7] Hotchkiss, G, Ryan, G, Subido, W, Broz, J, Mitchell, S, Rincon, R, Rolda, R and Guimbaolibot, L, “Effects of probe damage on wire bond integrity”, IEEE Electronic Components and Technology Conference, pp.1175-1180, 2001. [8] Sauter, W, Aoki, T, Hisada, T, Miyai, H, Petrarea, K, Beaulied, F, Allard, S, Power, J and Agbesi, M, “Problems with wirebonding on probe marks and possible solutions,” IEEE Electronic Components and Technology Conference, pp.1350-1358, 2003. [9] 徐健忠,”探針卡品質控制法於晶圓測試之研究”,中華大學電機工程研究所碩士論文,2001。 [10] John T. Strom, “Method of applying the analysis of scrub mark morphology and location to the evaluation and correction of semiconductor testing, analysis and manufacture“, United States Patent Application Publication, US 2010/0305897 A1, 2010. [11] Otto Weeden, “Probe Card Tutorial”, Keithley Instruments, Inc., 2003. [12] Cameron Harker, Jeff Lin, Stuart Pearce, “Improving Scrub Performance and Reducing Soak Time with a New Mechanism to Stabilize Probe Card Temperature”, IEEE Semiconductor Wafer Test Workshop, pp.6-17, 2009. [13] 白安鵬,”半導體積體電路測試概論”,pp.38-54,2008。 [14] 漢民測試股份有限公司,”TEL prober operation training guide”, pp.14-15, 2006. [15] 漢民測試股份有限公司,”HTSI presentation for cobra probe card”, pp.8-9, 2010. [16] 日商台灣傑睦股份有限公司,”Vertical contact probe card VC series”, pp.7-11, 2006. [17] Boehm, GmbH, “Large area probing meets small pitch”, IEEE Semiconductor Wafer Test Workshop, pp.3-4, 2005. [18] 曹育誠,”錫鉛凸塊晶圓之針測影響研究與分析”,南台科技大學電子工程研究所碩士論文,2004。 [19] 鄒慶福、賴騰憲,”微機電陣列式晶圓探針卡”,逢甲大學產學合作成果專刊,pp.121-123,2009。 [20] Jerry J. Broz and Reynaldo M. Rincon, “Probe contact resistance variations during elevated temperature wafer test”, IEEE International Test Conference, pp.396-405, 1999. [21] Maekawa, S and Takemoto, M, “Highly reliable probe card for wafer testing”, IEEE Electronic Components and Technology Conference, pp.1152-1156, 2000. [22] Sunil Wijeyesekera, “One touch 300mm wafer probing”, IEEE Semiconductor Wafer Test Workshop, pp.4-18, 2006. [23] TOKYO ELECTRON LIMITED, “Fully automatic wafer prober model:P-8, 3D probing offset operation manual”, 2001. [24] 美商福達電子股份有限公司, “TMPC2 setup on TEL prober”, 2010.en_US
dc.identifier.urihttp://hdl.handle.net/11455/3002-
dc.description.abstract針測卡使用於晶圓的前段測試,在高低溫度的環境下,藉由探針與晶圓上之銲墊互相接觸而留下針痕,以獲得電路在不同溫度下的電性與良率。隨著製程的進步,銲墊尺寸愈來愈小,而針測卡的DUT數也愈來愈多,導致針痕的位置與大小的控制愈趨困難。 本研究目的為改善針痕的問題,針痕的問題會影響測試良率的穩定度與封裝的可靠度,甚至是縮短探針壽命。本研究分成兩部份,第一部份為在機台的溫控環境下,觀察針測卡的溫度曲線變化,知道探針高度何時穩定;第二部份為更改相關變數來觀察針痕的變化,例如:熱針時間的多寡、機台水平的高低、機台做影像對準時的探針位置選擇、使用機台內的3D針測功能。 本研究的成果為得到最佳化的設定,改善針痕的問題,使業界的生產線可以得到最大產能,相對的也減少人力的浪費。zh_TW
dc.description.abstractProbe card using for front-end wafer testing that getting probe mark by probe tip contact with bonding pad and also getting property and yield of circuit in high or low temperature environment. Since the progress of wafer process to make pad size getting smaller and more DUT quantity on probe card, it’s caused that difficult to control the position and size of probe mark. This purpose of research is to improve the probe mark issue that impact the stability of testing yield and reliability of packaging, even shorten the life of probe tip. This research consist of two parts, the first part is monitor the thermal movement curve of probe card under temperature controlled on prober to know when the needle height is stable, the second part is monitor probe mark variation by change the related parameter, for example, SET UP time, prober head plate planarity, needle alignment pins selection, 3D probing function. This achievement is getting the optimal setting to handle the probe mark problem and also gaining maximum capacity in the production line, relatively speaking, it’s also reduce the waste of manpower.en_US
dc.description.tableofcontents誌謝 i 中文摘要 ii Abstract iii 目 錄 iv 表 目 錄 vi 圖 目 錄 vii 第一章 緒論 1 1.1 研究背景與動機 1 1.2 研究目的 7 1.3 文獻回顧 9 1.4 本文流程 10 第二章 探針卡之分類與應用 12 2.1 晶圓測試 12 2.1.1 晶圓測試發展概況 12 2.1.2 晶圓測試流程 13 2.1.3 測試機台架構 14 2.1.4 測試程式 17 2.2 探針卡之分類 18 2.2.1 環氧樹酯式探針卡 19 2.2.2 刀片式探針卡 21 2.2.3 薄膜式探針卡 22 2.2.4 垂直式探針卡 23 2.2.5 微彈簧式探針卡 25 2.2.6 微機電式探針卡 27 2.3 探針卡的出廠檢驗項目 29 第三章 探針卡的溫度曲線實驗 32 3.1 實驗目的與設計 32 3.2 實驗設備與架構 33 3.3 實驗方法與步驟 35 3.4 實驗結果與討論 39 第四章 不同參數對針痕的影響實驗(一) 45 4.1 實驗目的與設計 45 4.2 實驗方法與步驟 47 4.2.1 改變SET UP時間 47 4.2.2 改變晶圓承載機的平台水平(Head plate planarity) 49 4.3 實驗結果與討論 51 4.3.1 改變SET UP時間 51 4.3.2 改變晶圓承載機的平台水平(Head plate planarity) 55 第五章 不同參數對針痕的影響實驗(二) 58 5.1 實驗目的與設計 58 5.2 實驗方法與步驟 58 5.2.1 改變對針位置的選擇 58 5.2.2 使用機台的針痕補償功能(3D probing offset) 63 5.3 實驗結果與討論 68 5.3.1 改變對針位置的選擇 68 5.3.2 使用機台的針痕補償功能(3D probing offset) 72 第六章 結論與未來展望 75 6.1 結論 75 6.2 未來展望 77 參考文獻 78zh_TW
dc.language.isozh_TWen_US
dc.publisher光電工程研究所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1508201214571600en_US
dc.subject探針卡zh_TW
dc.subjectProbe carden_US
dc.subject針測卡zh_TW
dc.subject針痕zh_TW
dc.subject溫度曲線zh_TW
dc.subject3D針痕補償zh_TW
dc.subjectprobe marken_US
dc.subjectscrub marken_US
dc.subjectthermal movement curveen_US
dc.subject3D probing offseten_US
dc.title大尺寸晶圓針測卡的熱變化與針痕研究zh_TW
dc.titleStudy on the temperature-related high pin count probe card thermal movement and probe-marken_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1zh_TW-
item.grantfulltextnone-
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