Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/3005
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dc.contributor汪芳興zh_TW
dc.contributorFang-Hsing Wangen_US
dc.contributor.author張僑儒zh_TW
dc.contributor.authorChang, Chiao-Luen_US
dc.contributor.other光電工程研究所zh_TW
dc.date2012en_US
dc.date.accessioned2014-06-06T05:24:50Z-
dc.date.available2014-06-06T05:24:50Z-
dc.identifierU0005-2108201218132100en_US
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dc.identifier.urihttp://hdl.handle.net/11455/3005-
dc.description.abstract本研究是利用射頻磁控濺鍍系統成長氧化鋅摻鋁、氟薄膜於EagleXG玻璃上,使用四種含不同Al2O3比例(0 wt%、1 wt%、2 wt%及4 wt%)的氧化鋅靶材,其中ZnF2含量固定為1.5 wt%,將四種靶材分別命名為FZO、A1FZO、A2FZO與A4FZO,並探討其電性、表面型態、微結構以及光學特性。 第一部份,利用氬氣做為濺鍍背景氣體,固定電漿功率80 W、背景壓力5×10-6 Torr、工作壓力5×10-3 Torr、薄膜厚度350 nm,在不同的基板溫度( RT、100°C、200°C )沉積薄膜。無論鋁含量的多寡所有薄膜在200 °C環境下成長會有最佳的電阻率,並且可見光穿透率的範圍皆為91 %以上,其中又以A1FZO有最佳的電阻率為2.877×10-4 Ω-cm。 第二部份,使用電漿輔助化學氣相沈積(PECVD)對以上試片進行氫氬電漿後處理,後處理條件為通入氫氣和氬氣(1:1),固定基板溫度200°C,處理時間1小時。室溫沉積之A1FZO薄膜經電漿處理後,電阻率由5.479×10-4下降至4.247×10-4 Ω-cm。電性改善的原因為氫原子可鈍化其晶界及表面缺陷;並使吸附氧脫離,增加薄膜內氧空缺;同時氫會在薄膜中形成淺層施體,提供自由電子使薄膜導電性提高。 第三部份,將AFZO薄膜厚度成長至約1000 nm,再使用 0.2 % HCl蝕刻至厚度約800 nm,以增加其霧度,再經過氫氬電漿後處理 30 min,最後以PECVD沉積p-i-n非晶矽層,及熱蒸鍍鋁電極,形成太陽能電池,探討其短路電流、開路電壓、填充因子以及轉換效率等特性。結果顯示沉積溫度100°C之A1FZO薄膜所製備之太陽電池會有最好的轉換效率。zh_TW
dc.description.abstractIn this study, we deposited Al and F doped zinc oxide thin films on the EagleXG glass by RF magnetron sputtering. Four Al2O3 contents (0 wt%, 1 wt%, 2 wt%, and 4 wt%) and a fixed ZnF2 content (1.5 wt.%) were used to prepare sputtering targets labeled as FZO, A1FZO, A2FZO, and A4FZO, respectively. Effects of Al content, substrate temperature and plasma treatment on electrical properties, micro-structure and optical properties of thin films were investigated. In the first part, various AFZO thin films were deposited at the substrate temperatures of RT, 100°C, and 200°C. The sputtering was proceeded under the gas ambient of Ar, the RF power of 80 W, the working pressure of 5×10-3 Torr, and the film thickness of 350 nm. Results showed that the as-deposited AFZO films had lower resistivity and better transmittance in the visible range (>91%) at the substrate temperature of 200°C. Among these films, the A1FZO film achieved the lowest resistivity of 2.877×10-4 Ω-cm. In the second part, all as-deposited AFZO films were post-treated by H2+Ar plasma at 200°C by using a PECVD system. The plasma-treated AFZO film prepared at the lower temperature had larger decrease of resistivity. The film resistivity of the A1FZO film deposited at RT decreased from 5.479×10-4 to 4.247×10-4 Ω-cm. The improvement in film conductivity is due to grain boundary and surface passivation; desorption of oxygen species, hydrogen acting as shallow donors. In the third part, silicon thin film solar cells were fabricated by using surface-textured and plasma-treated AFZO films as front electrodes. The open-circuit voltage, short-circuit current, fill factor and efficiency of solar cells were investigated. The best efficiency was obtained with the A1FZO film deposited at 100°C.en_US
dc.description.tableofcontents誌謝 i 摘要 ii 圖目錄 vii 表目錄 xi 第一章 緒論 1 1.1前言 1 1.2透明導電膜 1 1.3研究動機與目的 2 第二章 基礎理論與文獻回顧 4 2.1氧化鋅薄膜特性 4 2.2氧化鋅摻雜鋁與氟(ZnO:Al,F AFZO)薄膜 5 2.2.1電學性質 5 2.2.2光學性質 6 2.2.3摻雜現象 7 2.3電漿基礎原理 8 2.4射頻磁控濺鍍 9 2.4.1濺鍍原理 9 2.4.2射頻濺鍍系統 9 2.4.3磁控濺鍍 10 第三章 實驗步驟與方法 11 3.1實驗製程與分析流程 11 3.2靶材製作流程 11 3.2.1粉末配製 12 3.2.2靶材製程 13 3.3基板切割與清洗流程 13 3.4薄膜沉積 14 3.4.1薄膜沉積設備 14 3.4.2 AFZO薄膜成長流程與實驗參數 14 3.4.3氫氬電漿處理流程與實驗參數 15 3.4.4稀鹽酸蝕刻流程與實驗參數 16 3.4.5矽薄膜太陽能電池製作與實驗參數 17 3.5薄膜量測分析 17 3.5.1薄膜厚度量測 17 3.5.2薄膜電性量測 18 3.5.2.1四點探針 18 3.5.2.2霍爾量測[31] 18 3.5.3薄膜結構分析 18 3.5.3.1 XRD結構分析 18 3.5.3.2表面型態分析 19 3.5.3.3表面粗糙度分析 19 3.5.4薄膜光學測量 19 3.5.5元素成分分析 20 第四章 實驗結果與討論 21 4.1沉積速率 21 4.2薄膜表面型態 21 4.3薄膜AFM分析 24 4.4薄膜XRD分析 26 4.5電性分析 29 4.6 XPS分析圖 33 4.7光學分析 35 4.8薄膜可靠度分析 41 4.9電漿後處理對AFZO薄膜影響 43 4.9.1電漿後處理後之表面分析 43 4.9.2電漿處理後薄膜之XRD分析 47 4.9.3電漿處理後薄膜之電性分析 50 4.9.4電漿處理後薄膜之XPS分析 56 4.9.5電漿處理後薄膜之光學分析 59 4.9.6電漿處理後薄膜可靠度分析 66 4.10薄膜太陽電池應用 68 4.10.1蝕刻速率 69 4.10.2蝕刻前後薄膜表面型態 69 4.10.3蝕刻前後薄膜電性分析 71 4.10.4蝕刻前後薄膜光學分析 72 4.10.5薄膜太陽能電池量測特性 77 第五章 結論 80 參考文獻 81zh_TW
dc.language.isozh_TWen_US
dc.publisher光電工程研究所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2108201218132100en_US
dc.subject氧化鋅zh_TW
dc.subjectZnOen_US
dc.subject電漿處理zh_TW
dc.subject太陽能電池zh_TW
dc.subjectplasmaen_US
dc.subjectsolar cellen_US
dc.title應用於薄膜太陽電池之透明導電氧化鋅摻鋁氟之薄膜製備及特性研究zh_TW
dc.titleFabrication and characterization of transparent conducting ZnO:Al,F thin film for thin-film solar cell applicationsen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1zh_TW-
item.grantfulltextnone-
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