Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/3009
標題: 氫化非晶矽太陽電池特性優化
Optimizing the performance of hydrogenated amorphous silicon solar cells
作者: 劉孟澄
Liu, Meng-Cheng
關鍵字: 氫化非晶矽薄膜太陽電池;hydrogenated amorphous silicon thin film solar cell;氫稀釋比;純矽甲烷;緩衝層;pure silane;hydrogenated dilution ratio;buffer layer
出版社: 光電工程研究所
引用: [1] 吳建樹、翁得期、陳麒麟,球性矽及矽薄膜太陽能電池未來發展方向,工業材料雜誌,第 241 期,第 119 頁至 120 頁,2007。 [2] 陽德仁編著,太陽能電池材料,五南出版社,初版,第 81頁至 88頁,2008。 [3] J. Koh et al., Appl;. Phys. Lett., 73, 1526 (1998)。 [4] C. Longeaud et al., Journal of Non-Crystalline Solids, 227-230, 96 (1998)。 [5] O. Vetterl et al., Solar Energy Materials and Solar Cells, 62, 97 -108 (2000)。 [6] Carlson D. E., Wronski C R., Applied Physics Letters, 28, 671-673 (1976)。 [7] J. Yang, Appl. Phys. lett., 70 (22), 975 (1997)。 [8] D.L. Staebler and C.R. Wronski, Applied Physics Letters, 31,292-294 (1977)。 [9] D. M. Adler, J non-cryst. Solids, 66, 273 (1984)。 [10] D. Redficld and R.H. Bude, Appl. Phys. Rev. Lett., 65,464 (1900)。 [11] Y. Hishikaw et al., Solar Energy Materials and Solar Cells, 34, 303 (1994)。 [12] T. Merdzhanova et al., Journal of Non-Crystalline Solids, 2011。 [13] J. Robertson, Journal of Non-Crystalline Solids, 266-269, 79-83 (2000)。 [14] H. Kakiuchi et al., Journal of Non-Crystalline Solids, 351, 741-747 (2005)。 [15] M. Kondo and A. Matsuda, Current Opinion in Solid State and Materials Science, 6, 445-453 (2002)。 [16] Q. H. Fan et al., IEEE, 1491-1495 (2010)。 [17] A. F. i Morral and P. Roca i Cabarrocas, Thin Solid Films, 383, 161-164 (2001)。 [18] A. F. i Morral and P. R. i Cabarrocas, Physical Review B, 69, 125307 (2004)。 [19] R. R. Arya, A. Catalano, and R. S. Oswald, Applied Physics Letters, 49, 1089-1091 (1986)。
摘要: 
氫化非晶矽(a-Si:H)薄膜太陽電池之各層優化,可改善元件之光學、結構及電學特性,本論文係使用射頻 13.56 MHz 脈波調變電漿輔助化學氣相沉積 (Pulse-PECVD) 技術製作a-Si:H薄膜太陽電池。探討純矽甲烷(SiH4) (氫稀釋比為0 : R0) 及氫稀釋比為4 (R4) 氣體配比,並調變電漿開啟時間及改變連續電漿功率製作單一本質層a-Si:H薄膜太陽電池。

以脈波調變電漿對純矽甲烷(R0)製作a-Si:H薄膜太陽電池的本質層,電漿開啟時間較長時,將導致粉塵產生,使理想因子上升及填充因子下降。對氫稀釋比提高至 R4 製作a-Si:H太陽電池,開啟電漿時間上升時,填充因子持續上升,有效提升a-Si:H太陽電池之光電轉換效率。

本論文最高效率之a-Si:H單層膜太陽電池為以氫稀釋比R0及電漿開啟時間10 msec所製作之電池,其特性分別為能量轉換效率8.01 %、開路電壓0.81 V、短路電流密度14.46 mA/cm2、填充因子68.8 % 及理想因子1.66。

本論文並將氫稀釋比R0製作之太陽電池在p/i 及 i/n 介面導入緩衝層,以探討 p/i 及 i/n 介面之影響。在p/i 及 i/n 介面導入能隙值較高的緩衝層各10 nm之a-Si:H太陽電池,其特性可分別改善為能量轉換效率提升至 8.56 %、開路電壓0.82 V、短路電流密度14.8 mA/cm2及填充因子70.4 %。

Optimizing the qualities of p, I, and n layers of hydrogenated amorphous silicon (a-Si:H) solar cells can improve the structural, optical, and electrical characteristics of solar cells. In this study, i-layer qualities of a-Si:H solar cells were modified by pulse-wave modulated 13.56 MHz RF plasma with changing hydrogenated dilution ratio, plasma turn-on (ton) time, and power of continuous-wave (CW) plasma.

Using pulse-wave modulation plasma with pure silane (SiH4) (R = [H2]/[SiH4], R = 0) to fabricate i-layer of a-Si:H solar cells, increasing the modulated plasma turn-on ton time, the large molecules of Si-related particles are easily generated in chamber, and this condition led the increase of ideal factor and the decrease fill factor of the R0 a-Si:H solar cells. Using pulse-wave modulation plasma with R4 (R = 4) to fabricate i-layer of a-Si:H solar cells, fill factor and energy conversion efficiency of the R4 a-Si;H solar cells are increased clearly as ton time rises.

The R0 a-Si:H solar cell with 10 msec ton time has the better electrical properties with conversion efficiency, open-circuit voltage, short-circuit current density, fill factor and ideal factor of about 8.01 %, 0.81 V, 14.46 mA/cm2, 68.5 % and 1.66.

To further improve the performance of the R0 a-Si:H solar cell, higher band-gap a-Si:H buffer layers with fixed thickness 100 A are used to insert into the p/i and i/n interfaces. I-V measurements show that in this study, the best R0 a-Si:H solar cell with p/i and i/n buffer layers has the conversion efficiency, open-circuit voltage, short-circuit current density, fill factor and ideal factor of 8.56 %, 0.82 V, 14.8 mA/cm2, and 70.4 %, respectively.
URI: http://hdl.handle.net/11455/3009
其他識別: U0005-2708201216153000
Appears in Collections:光電工程研究所

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