Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/3010
標題: 氫流量對於直流磁控濺鍍氧化鋅摻雜鋁透明導電膜之研究
Influence of hydrogen flow rate on AZO thin films by DC magnetron sputtering
作者: 黃冠銘
Huang, Guan-Ming
關鍵字: 氧化鋅鋁;AZO;透明導電膜;直流磁控濺鍍;氫氣流量;Transparent conductive oxides;DC magnetron sputtering;hydrogen flow rate
出版社: 光電工程研究所
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摘要: 
本研究利用直流(DC)濺鍍系統成長摻雜氫之氧化鋅鋁(AZO)於玻璃上,透過改變基板溫度與製程中氣體含氫量探討濺鍍條件對氧化鋅鋁(AZO)薄膜的影響。
由實驗結果得知,在高溫製程部分,以沉積功率80W、基板溫度325℃、含有氫氣 0.5 sccm的薄膜有最佳電阻值表現為2.3×10^(-4)(Ω-cm);在低溫製程部分,沉積功率80W、基板溫度125℃、含有氫氣1 sccm的薄膜有最佳電阻值表現為4.8×10^(-4)(Ω-cm)。由XRD圖形發現AZO薄膜具有顯著的(002)擇優取向,且基板溫度125℃、225℃隨著氫流量的增加繞射峰有往低角度偏移的現象,基板溫度325℃則不明顯。從SEM圖形中也可發現薄膜由低溫時的塊狀結構轉變成高溫時的緻密結構。由UV-VIS量測發現在可見光波長範圍內透光率皆有85%以上,其能隙隨著氫流量的增加而增加,但過量的氫流量能隙變小。在紅外光區域(IR)的穿透率隨著氫流量的增加而降低.

In this study, the hydrogen doped AZO thin films on glass were deposited by DC magnetron sputtering system, and characterized systematically. With change substrate temperature and hydrogen gas investigated that influence on its electrical and optical property with different deposition condition.
From the experiment results, the lowest resistivity of the films is obtained at deposition power 80W and substrate temperature 325 ℃ from the high temperature process section. It exhibited the lowest resistivity of 3.73×10-4 Ω-cm with hydrogen-containing 0.5 sccm; The best resistivity of the films is obtained at deposition power 80W and substrate temperature 125 ℃ from the lowest temperature process section. It exhibited the lowest resistivity of 4.8×10-4 (Ω-cm) with hydrogen-containing 1 sccm. From XRD result shows that all the AZO films have prominent (002) orientation. Diffraction peaks red shift with increase of hydrogen flow rate at substrate temperature of 125 ℃ and 225 ℃. But red shift was not increase at substrate temperature of 325 ℃. From SEM images, the films become more compact at high substrate temperature. More than 85% transmittance was found in the visible region. The optical band gap increases with the hydrogen flow rate, but more hydrogen flow rate decreases optical band gap. The transmittance in the infrared region (IR) decreases with hydrogen flow rate.
URI: http://hdl.handle.net/11455/3010
其他識別: U0005-2107201319101900
Appears in Collections:光電工程研究所

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