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標題: 漸變本質層氫化非晶矽鍺薄膜太陽電池
Graded intrinsic-layer a-SiGe:H thin-film solar cells
作者: 江英銘
Chiang, Ying-Ming
關鍵字: 氫化非晶矽鍺太陽電池;a-SiGe:H;V型結構;電漿功率;漸變能隙;V-shape;RF power;graded bandgap
出版社: 光電工程研究所
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隨著a-SiGe:H本質層厚度的增加可提高更多的光吸收,以增加短路電流密度,但是會降低薄膜內部的內建電場,使填充因子大幅下降。為了改善a-SiGe:H太陽電池的光生載子收集效率而採用V型漸變能隙a-SiGe:H多層膜結構,以調變V型結構最低能隙位置改變太陽電池特性。在本研究中,所獲得到最高效率之V型漸變本質層能隙之太陽電池,其轉換效率為7.01%、短路電流密度為16.5 mA/cm2、開路電壓為0.76 V、以及填充因子為55.8%。

The optical band gap of hydrogenated amorphous silicon-germanium (a-SiGe:H) thin film is decreased with raising of doped germanium atoms, which lead to an increase in absorption coefficient at long wavelength light in intrinsic a-SiGe:H layer. However, defects of a-SiGe:H films are increased as increasing of germanium atoms result in inferior qualities of thin films. In this thesis, changing hydrogen plasma treatment by hydrogen dilution and RF power is used to reduce weak bonds due to doping of germanium atoms, thus to improve the qualities of a-SiGe:H films.
For improving collection of photogenerated carriers, graded optical bandgap multilayer a-SiGe:H film is designed to increase the build-in electric field in the film. Changing the slope of graded bandgap with fixed total thickness of a-SiGe:H intrinsic layer can influence the electron-hole pair generation and collection and the variations of electrical properties of a-SiGe:H solar cells especially on short-circuit current density and fill factor. Adding p/i and i/n graded layers can reduce the band offset at p/i and i/n interfaces, and enhance open-circuit voltage and fill factor.
As increased thickness of a-SiGe:H intrinsic layer achieve raise in light absorption, the short-circuit current density is increased. Nevertheless, the build-in electric field in a-SiGe:H film is reduced result in the decrease of fill factor. V-shape graded optical bandgap multilayer a-SiGe:H structures have been adopted to improve the collection efficiency of photogenerated carriers. Changing the lowest bandgap position of V-shape structure can alter the solar cell performance, in this study, the best performance of V-shape a-SiGe:H solar cell has the energy conversion efficiency of 7.01%、short-circuit current density of 16.5 mA/cm2、open-circuit voltage of 0.76 V、fill factor of 55.8%.
其他識別: U0005-2708201212094500
Appears in Collections:光電工程研究所

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