Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/3013
標題: 熱處理降溫速率對溶膠凝膠法製備AZO透明導電膜的影響
Effect of Thermal Cooling Rate on Sol-Gel Prepared AZO Transparent Conductive Oxide Films
作者: 馮德曜
Feng, De-Yao
關鍵字: 透明導電膜;Transparent Conductive Oxide;氧化鋅;退火;ZnO;Annealing
出版社: 光電工程研究所
引用: [1]陳沛霖,光聯雙月刊,財團法人光電科技工業協進會,21頁,3月(2009) [2]陳沛霖,光聯雙月刊,財團法人光電科技工業協進會,21頁,3月(2009) [3]楊明輝,透明導電膜,藝軒圖書出版社,1頁,10月(2006) [4]楊明輝,透明導電膜,藝軒圖書出版社,1頁,10月(2006) [5]楊明輝,透明導電膜,藝軒圖書出版社,1頁,10月(2006) [6] T.Dietl,H.Ohno,F.Matsukura,J.Cubert,Science 287,1019,(2000). [7] Chopra,Major and Pandya,Tranparent Conductors-A Status Review,Thin Sold Films,102,1-46,Copyright,(1983) [8] D. W. Lane, T. A. Coath, H. S. Beldon, Optical properties and structure of thermally evaporated tin oxide films, Thin Solid Films, vol. 221, 262, (1992) . [9] L. J. Meng, M. P. dos Santos, Structure effect on electrical properties of ITO films prepared by RF reactive magnetron sputtering, Thin Solid Films, vol. 289, 65, (1996) . [10] B. M. Ataev, A. M. Bagamadova, V. V. Mamedov, A. K. Omaev, M. R. Rabadanov, Highly conductive and transparent thin ZnO films prepared in situ in a low pressure system, Journal of Crystal Growth, vol. 198-199, 1222, (1999) . [11] F. Paraguay D., W. Estrada L., D. R. Acosta N., E. Andrade, M. Miki-Yoshida,Growth, structure and optical characterization of high quality ZnO thin films obtained by spray pyrolysis, Thin Solid Films, vol. 350, 192,( 1999) . [12] M.N. Kamalasanan, S. Chandra,Sol-gel synthesis of ZnO thin films, Thin Solid Films, vol. 288, 112, (1996). [13] Chau . Laikwan , Sol-Gel-Derived Transparent Conducting Oxide Films , CHEMISTRY,Vol. 63, No.3, 410,(2005) . [14] Chau . Laikwan , Sol-Gel-Derived Transparent Conducting Oxide Films , CHEMISTRY,Vol. 63, No.3, 410,(2005) . [15] R. G. Gordon,Criteria for Choosing Transparent Conductors, MRSBulletin, 52-57, (2000) . [16] 楊明輝,透明導電膜,藝軒圖書出版社,5頁,10月(2006) [17] J. Koike, K. Shimoe and H. Ieki, Jpn. J.Appl. Phys. 32, 2337(1993). [18]E.Burstein,Anomalous Optical Absorption Limit in InSb Phys.Rev.,93,621 -633,(1954). [19] Chau . Laikwan , Sol-Gel-Derived Transparent Conducting Oxide Films , CHEMISTRY,Vol. 63, No.3, 308,(2005). [20] Dislich, H.; Hinz, P. J. Non-Cryst. Solids, 48, 11,(1982) . [21] B.D. Cullity, Elements of X-Ray Diffraction, Addison-Wesley ublishing Company, Inc., London, (1978) . [22]梁邦逸,低電阻高穿透率摻雜鎵氧化鋅薄膜研究,38,(2011) [23]楊德仁等著,”半導體材料測試與分析”,北京科學出版社,(2010) [24] Donald A. Neamen,An Introduction to Semiconductor,McGraw Hill , (2007) . [25]施敏,張鼎張,伍國玨,劉柏村等,半導體元件物理學,國立交通大學,(2008) [26] L.F.Mattheiss,Electronic structure of the 3d monoxides -metal transition. I.Energy-band results,Physical Review B,5,290,(1972).
摘要: 
本研究是利用溶膠凝膠法(sol-gel)備製氧化鋅鋁(AZO)溶液,並使用旋轉塗佈法(Spin coating)將AZO溶液塗佈於玻璃基板上,隨後用加熱板對基板以350℃加熱烤乾,持續烤10分鐘,完成5次旋轉塗佈製程後,將試片送入含氮氣(N2)的爐管做退火處理,並針對退火溫度、退火模式與退火後降溫速度,依據其表面型態、晶體結構、光學特性與電性分別探討。
由實驗結果得知不同退火溫度下,以650℃退火處理可以得到最佳的電性,其電阻率平均最低可以達到1.5 Ω-cm,平均透光率皆達到85%以上。由XRD圖形發現AZO薄膜具有C軸(002)優先取向,於SEM圖中可以發現退火溫度上升晶粒結構愈緻密,且晶粒尺寸愈大,在650℃可以得到最大的晶粒尺寸的連續平面,於750℃因大於基板應力點溫度造成玻璃擠壓晶粒變小的不連續續平面,低於650℃晶粒結構鬆散與有機前驅物的殘留,所以發現表面結構有孔洞的情況發生。
第二部份探討不同的退火模式的影響,特別針對緩升緩降、緩升快降與快升快降三個模式分析比較,從實驗結果發現三個退火模式皆能提升電性,且平均透光率皆達到85%以上。其中以緩升緩降模式的電性提升最佳,但耗費工時最長,而其他兩種退火模式卻無法得到最佳電性,於表面結構上發現,緩升緩降晶粒尺寸最大最完整,其次是緩升快降,而緩升快降與快升快降晶粒尺寸非常趨近,所以可合理推斷降溫階段是影響電性好壞最關鍵要素。
最後針對退火後快速降溫與急速降溫作探討,由實驗結果發現,當急速降溫造成晶粒急速收縮時,不但電性無法提升,且薄膜破裂與晶粒尺寸縮小情況更為嚴重,所以並不適用於薄膜製程,但奈米晶粒結構可作於其他方面的應用。

The main purpose of this thesis is to fabricate the transparent conductiveAZO (ZnO:Al) film by sol-gel method. The films were spin coated on Eagle 2000 glass with strain point 666℃. The samples were then annealed between 400 to 750℃ in N2 with different cooling schemes. The surface morphology, crystallinity, resistivity, and optical properties of AZO films were detailed studied. The experimental results showed that sol-gel films revealed a best film quality with lowest resistivity to 1.5 Ω-cm while still get an average transparency of about 85% when annealed 650℃.
The samples were even annealed at the very brutal conditions to test the films quality. Fast rumpling up and cooling down process could serious detrimental to film surfaces. The surface roughness varied great with the annealing temperatures and cooling process. In this research, we learned a different way to control film surface morphology which may have a potential application in growing nanorods.
URI: http://hdl.handle.net/11455/3013
其他識別: U0005-2007201212172500
Appears in Collections:光電工程研究所

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