Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/3015
標題: 薄膜電晶體微小電性變異之研究
Study on slight variation in electrical properties of thin film transistor
作者: 張育誠
Chang, Yu-Cheng
關鍵字: 薄膜電晶體;thin film transistor;電性分析;非晶矽薄膜半導體;漏電流;electrical properties;TFT;current leakage
出版社: 光電工程研究所
引用: 參考文獻 [1] OLED-DISPLAY.net ” HOW WORKS A IGZO BASED LCD-OLED DISPLAY” http://www.oled-display.net/how-works-a-igzo-based-lcd-oled-display/ [2] L. Guo, M. Kondo, M. Fukawa, K. Saitoh and A. Matsuda, “High Rate Deposition of Microcrystalline silicon Using Conventional Plasma-Enhance Chemical Vapor Deposition” , Jpn.J.Appl.Phys, vol.37, pp.1116-1118, 1998. [3] M. Stutzmann, W. B. Jackson, and C. C. Tsai, “Kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon” , Appl. Phys, Lett. 45(10), vol.25, pp.1075-1077, 1984. [4] B.Pivac, I. Kovacevic, I. Zulim, V. Gradisnik, “Effect of Light Soaking on Amorphous Silicon” , IEEE, pp.884-887, 2000. [5] Z. Yiping, Z. Dianlin, K. Guanglin, P.Guangqin, and L. Xianbo, “Evidence for Light-Indeced Increase of Si-H Bonds in Undoped a-Si:H” , Phys Rev.Lett. vol.74, No. 4, pp.558-561, 1995. [6] 戴亞翔, “TFT-LCD 面板的驅動與設計” , 五南圖書出版股份有限公司, pp.35-39, 2006. [7] H.Miyashita, Y. Watabe, “Dependence of Thin Film Transistor Characteristic on the Deposition Condition of Silicon Nitride and Amorphous Silicon” , IEEE, Trans. Electron Device, vol.41,No.4, pp.499-503, 1994 [8] 紀國鐘, 鄭晃忠, “液晶顯示器技術手冊” , 台灣電子材料與元件協會出版, 中華民國經濟部技術處發行, pp. 278-279, 2000 [9] D. B. Thomasson, and T. N. Jackson, “High Mobility Tri-Layer a-Si:H Thin-Film Transistor with Ultrathin Active Layer” , IEEE Electron Device Lett., vol.18, No.8, pp.397-399, 1997. [10] 藍玉屏, 徐祥瀚, 鍾宗穎, “液晶顯示器MURA缺陷量化標準之研究”, 自動光學檢測設備論壇, 工研院量測中心, 2008. [11] 朱啟郎, 李吉群, “影響檢驗TFTLCD 顯示面板缺陷的因素之研究”, 國立中興大學機械工程學系碩士論文, pp.19-26, 1986-07 [12] 戴亞翔, “TFT-LCD 面板的驅動與設計” , 五南圖書出版股份有限公司, pp.280-287, 2006. [13] Y. Kaneko, N. Koike, K. Tsutsui and T. Tsukada, “Amorphous silicon phototransistors” Appl. Phys. Lett., vol. 56, p.650, 1900. [14] A. K. Okyay, A. J. Pethe, D. Kuzum, S. Latif, D. A. B. Miller and K. C. Saraswat, “SiGe optoelectronic metal-oxide semiconductor field-effect transistor,” Opt Lett., vol. 32, p.202, 2007.
摘要: 
本論文主要目的是解析非晶矽薄膜電晶體的微小電性差異所形成的畫面異常並針對其相關製程提出改善方案。
一般解析電性異常的手法,是藉由量測Id - Vg 的數值來判斷其電性異常機制的特徵,但該手法並不適用於本論文提供的樣本。而本論文提出新的檢測方式,乃利用非晶矽薄膜電晶體在照光環境下形成漏電流的特徵,量測其穩態時畫素內的電位差異,並藉此討論其電性差異的形成機制。我們推測該缺陷是由於非晶矽薄膜電晶體中的氫鍵在製程中被破壞,導致照光時,產生的電子電洞對數量比正常區少,也就是漏電流較低,因此在畫面異常區的畫素中會量測到比正常區較低的電位。我們以相同的檢測手法套用在陣列電性檢查機的參數中,可以得到驗證。

The main purpose of this thesis is to investigate and analyze the mura phenomenon due to the weak electrical variation in the a-Si:H thin film transistor and to provide the solution in process.
In the past, we analyzed the electrical characteristic of a-Si:H thin film transistors by measuring Id-Vg curves. However, it is not suitable in this work due to that we cannot define the abnormal electrical characteristic by this method. In this work, we provide a new method by measuring the variation of pixel voltages under illumination to find the cause of the abnormal phenomenon. According to measurement result, we suspected that light induced electron-hole pairs in the abnormal area were less than that in the normal area due to that hydrogen bonds had been destroyed in the process. Then, we employed this method in array testers and demonstrated the results.
URI: http://hdl.handle.net/11455/3015
其他識別: U0005-1501201310122700
Appears in Collections:光電工程研究所

Show full item record
 

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.