Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/3017
標題: 藍光覆晶發光二極體應用於晶圓級封裝之探討
Applications of InGaN base Flip-Chip on Wafer Level Chip Package
作者: 江昌翰
Chiang, Chang-Han
關鍵字: 晶圓級封裝;WLCSP;覆晶發光二極體;反射鏡;Flip-Chip;Reflector
出版社: 光電工程研究所
引用: 參考文獻: [1] M. R. Krames, M. Ochinai-Holocomb, G. E. Hofler, C. Carter-Coman, E. I. Chen, I. –H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J. –W. Huang, S. A. Stockman, F. A. Kish, and M. G. Carford, “High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett., vol. 75, pp. 2365-2367, Oct. 1999. [2] D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN–GaN LEDs grown on patterned sapphire substrates,” IEEE Photon. Technol. Lett., vol. 17, NO. 2, pp. 288-290, Feb. 2005. [3] T. Egawa, B. Zhang, and H. Ishikawa, “High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD,” IEEE Electron Device Lett., vol. 26, NO. 3, pp. 169-171, Mar. 2005. [4] W. S. Wong, and T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett., vol. 75, pp. 1360-1362, Sep. 1999. [5] P. R. Tavemier and D. R. Clarke Dunn, “Mechanics of laser-assisted debonding of films,” J. Appl. Phys., vol. 89, pp. 1527-1536, Feb. 2001. [6] J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y.-C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Go‥ tz, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” App. Phys. Lett., vol. 78, pp. 3379-3381, May .2001. [7] S. Nakamura and S. F. Chichibu, “Introduction to Nitride Semiconductor Blue Laser Diode and Light EmittersDiodes,” pp. 11-17, London: Taylor and Francis, 2000. [8] S. Nakamura and G. Fasol, “The Blue Laser Diode: GaN Based Light Emitters and Lasers,” pp. 6-10, Berlin: Springer, 2000. [9] Electrical temperature measurement using semiconductors, R. John W sofia, Analysis Tech, Cooling Zone [10] Mitsuo fukuda, “Optical semiconductor Devices, Chapter 2”, John Wiley & Sons, Inc., New York, 1999. [11] Yimin Gu and Nadarajah Narendran, “Anon-contact Method for Determining Junction temperature of Phosphor-Converted white LEDs” Proceeding of SPIE, Vol. 5187, 2003. [12] Eugene Hong and Nadarajah Narendran, “A Method for Projecting Useful Life of LED Lighting Systems” , Proceedings of SPIE, Vol.5187, 2003. [13] Agilent Technologies, application Brief A05 Led Thermal Testing [14] Mitsuo Fukuda, “Optical Semiconductor Devices, Chapter 6”, John Wiley & Sons, Inc., New York, 1999. [15] High power and high reliability GaN/InGaN flip-chip light-emitting diodes_Vol 16 No 4, April 2007 [16] Junction Temperature and Reliability of High Power Flip-chip Light Emitting Diodes Materials Science in Semiconductor Processing August–October 2007, Pages 206–210 [17] Improvement in Electrical and Optical Performances of GaN-Based LED With SiO2/Al2O3 Double Dielectric Stack Layer IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 4, APRIL 2012 [18]李正中。”薄膜光學與鍍膜技術”。藝軒圖書出版社(2006). [19]田民波。”薄膜技術與薄膜材料”。五南圖書出版公司(2007). [20]陳隆建。”發光二極之原理與製程(第三版)”。全華圖書(2010) [21]Improvement of Light Extraction Efficiency of Flip-Chip Light -Emitting Diode by Texturing the Bottom Side Surface of Sapphire Substrate,IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 13, JULY 1, 2006 [22]Enhancement of InGaN–GaN Indium–Tin–Oxide Flip-Chip Light- Emitting Diodes With TiO2–SiO2 Multilayer Stack Omnidirectional Reflector, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 19, OCTOBER 1, 2006
摘要: 
摘要
本論文研究主要以覆晶式藍光發光二極體結構來改善傳統金線式藍光發光二極體的散熱問題。探討以這兩種型式的晶粒光電特性的測量與散熱優劣的比較,並分析討論其結果。
覆晶發光二極體結構中反射結構(Reflector)與晶粒保護層(Passivation) 會直接影響晶粒亮度與可靠度,因此針對其結構中反射鏡效率與晶粒保護層材料的選擇進行實驗設計。反射結夠優化實驗中,以不同厚度的氧化銦錫(ITO)與氧化矽(SiO2)再搭配鋁金屬反射鏡所得到的最佳反射率為82%。
晶粒保護層材料製作厚度相同的(10kA)氧化矽、氮化矽及氧化鋁分別作實驗,氧化鋁在可靠度測試中的表現優於其他兩種材料。上述實驗所得到結果製作於覆晶發光二極體結構中,最後量測兩種結構的光電特性結果,覆晶式發光二極體在亮度表現上高於傳統金線式藍光發光二極體,在接面溫度(Tj)低於傳統金線式藍光發光二極體,最後在可靠度測試上,覆晶式發光二極體亮度衰減較小。

Abstract
This research aimed at Flip-chip structure study to improve the heat dissipation problem that occurred in traditional wire bonding chip and also compare with chip characteristic and heat dissipation ability between these two different chip structures.
In Flip-chip structure reflector and passivation will influence the light intensity and chip reliability. Using different thickness in ITO and SiO2 with aluminum reflector in reflector experiment, the optimum reflection obtaining is around 82%. In passivation experiment, using silicon oxide, silicon nitride and aluminum oxide, the aluminum oxide revealed the best result in reliability test. Applied the optimum experiments parameters in this research to fabricate Flip-Chip, he obtained output power in Flip-Chip is higher, junction temperature is lower and intensity decay is smaller than transitional wire bonding chip.
URI: http://hdl.handle.net/11455/3017
其他識別: U0005-1908201319462900
Appears in Collections:光電工程研究所

Show full item record
 
TAIR Related Article

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.