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標題: 氮化鎵/二氧化鈦奈米複合材料薄膜作為染料敏化太陽能電池之探討
Dye-sensitized solar cells based on gallium nitride/titanium dioxide nanocomposite photoelectrodes
作者: 黃尹柔
Yin, Rou-Huang
關鍵字: 染料敏化太陽能電池;Dye-sensitized solar cells;氮化鎵;gallium nitride
出版社: 化學工程學系所
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目前的全球社會正面臨能源危機與溫室災難兩大難題,對能源的需求迫使我們去尋找更多可持續發展的資源,在這樣的環境下,低成本的染料敏化太陽能電池(Dye-sensitized solar cells, DSSC)因應而生。本論文分成兩部份,第一部分主要在探討對電極,分別在單純FTO和修飾一層奈米碳管的FTO上電沉積白金,測其光電轉換效率,並以場發射式掃描式電子顯微鏡(field emission scanning electron microscopy, FESEM)觀察表面形貌之差異。
第二部份的主題主要將氮化鎵(Gallium Nitride, GaN)配製成不同比例之GaN/TiO2水溶液,並利用Polyethylene glycol (PEG)提升薄膜的成膜性,我們將GaN/TiO2複合材料以刮刀法(doctor blade technique)修飾於FTO導電玻璃上,量測不同GaN含量之GaN/TiO2複合薄膜光電極染料敏化太陽能電池之光電轉換效率並藉由電化學交流阻抗分析GaN/TiO2奈米複合薄膜光電極的內部電阻。由光電轉換效率量測結果可得知在GaN含量為GaN/TiO2-Low時有最佳的光電轉換效率4.024 %,由電化學交流阻抗分析結果也顯示GaN/TiO2-Low奈米複合薄膜光電極有最低的內部電阻,因此GaN/TiO2-Low奈米複合薄膜光電極能使電子傳遞速度獲得提升,減少再結合現象的發生。接著我們利用場發射式掃描式電子顯微鏡(field emission scanning electron microscopy, FESEM) 觀察GaN/TiO2奈米複合薄膜光電極的表面形貌並利用紫外光/可見光分光光譜儀(UV/Vis spectrophotometer)分析GaN/TiO2奈米複合薄膜光電極所吸附染料分子的吸附量,藉此得知光電轉換效率表現上的差異是由於GaN之能隙(energy gap, Eg)與導帶(conduction band, ECB)與TiO2接近所造成。最後我們將探討GaN/TiO2-Low複合薄膜的厚度對於光電轉換效率之影響,根據結果顯示,在薄膜厚度為7.000 μm時有最佳的光電轉換效率4.770 %,與單純TiO2奈米薄膜光電極之光電轉換效率3.000 % 相比,GaN/TiO2-Low複合薄膜光電極在光電轉換效率表現上提升將近59%。
其他識別: U0005-1207201310525400
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