Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/34159
標題: Analysis of saponins from black bean by electrospray ionization and fast atom bombardment tandem mass spectrometry
作者: Lee, M.R.
李茂榮
Chen, C.M.
Hwang, B.H.
Hsu, L.M.
關鍵字: fast atom bombardment tandem mass spectrometry;saponins;electrospray;ionization;black bean;liquid chromatography/mass spectrometry;glycine-max merrill;medicago-sativa l;soyasapogenol-a;plant-extracts;root saponins;13 varieties;sapogenol;seeds;bisdesmosides;legume
Project: Journal of Mass Spectrometry
期刊/報告no:: Journal of Mass Spectrometry, Volume 34, Issue 8, Page(s) 804-812.
摘要: 
Saponins from black bean (Vigna mungo L. Hepper) were analyzed using positive and negative ion fast atom bombardment mass spectrometry (FAB-MS) and liquid chromatography/mass spectrometry. Methanol was used to extract the saponins from defatted black bean, which was partially purified by extraction with n-butanol, and the extract was dialyzed with 3000 M(r) cut-off tubing. The dialyzate was analyzed using mass spectrometry. According to FAB-MS/MS, mixtures from black bean contain soyasaponin I as the predominant saponin. In addition, MS/MS analysis was performed in which the structures of saponins of black bean cotyledon were determined to be soyasaponin I, soyasaponin II, soyasaponin V, 3-O-[alpha-L-rhamnopyranosyl-(1 --> 2)-beta-D-galactopyranosyl-(1 --> 2)-beta-D-glucuronopyranosyl] complogenin (saponin A) and 3-O-[alpha-L-rhamnopyranosyl-(1 --> 2)-beta-D-glucopyranosyl-(1 --> 2)-beta-D-glucopyranosyl]oleanolic acid (saponin B). For the black bean shell and the root of black bean sprout, analysis confirmed the saponins of soyasaponin I, soyasaponin IT, soyasaponin V, saponin A, saponin B, acetylsoyasaponin A(4) and soyasaponin beta(g). Moreover, all the studied saponins were found in the stem and leaves of the black bean sprouts, except soyasaponin beta(g) and acetylsoyasaponin A(4), respectively. Copyright (C) 1999 John Wiley & Sons, Ltd.
URI: http://hdl.handle.net/11455/34159
ISSN: 1076-5174
DOI: 3.3.co;2-#>10.1002/(sici)1096-9888(199908)34:8<804::aid-jms835>3.3.co;2-#
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