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標題: Studies on the structure/antistatic property relationships of waterborne polyurethanes
作者: 巫昇炎
關鍵字: waterborne polyurethane;水性聚氨基甲酸酯;antistatic property;sodium sulfonated group;抗靜電性;璜酸鹽官能基
出版社: 化學工程學系
Polyurethane (PU) has been widely used in the adhesives, coatings, inks, textile finishings and artificial leathers, due to the properties of high quality and high variability of chemical structures. In this work, the anionic waterborne polyurethane (WPU) would be synthesized by the prepolymer mixing process. A series of WPUs were obtained by varying the amount of different kinds of hydrophilic groups, consisting of isophorone diisocyanate (IPDI), polyols including Aru5620, a long chain polyester polyol, and D3117, a long side chain polyether polyol with a sodium sulfonated group, dimethylol propionic acid (DMPA), and chain extender including EDA, a short —chain diamine or EES-200L, a short-chain diamine with a sodium sulfonated group.
With the help of instruments, for instance, the differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), dynamic mechanical analyzer (DMA), and surface resistivity/resistance meter, the mechanical and thermal properties, and surface resistance were investigated. The factors affecting the properties of the WPUs, such as the amount of hydrophilic groups、chain extender、the content of sulfonated groups and NaClO4 are taken into account. It is found that the mechanical, thermal, and antistatic properties are significantly affected by the above-mentioned four factors in the WPUs. Moreover, the EES-200L-containing system is better than the EDA-containing system in terms of mechanical and thermal properties. This is because the presence of higher hard-segment content in the EES-200L-containing system. Furthermore, the higher content of sulfonated groups in the EES-200L-containing system also leads to higher physical crosslinking density. The surface resistivity of the EDA-containing system with a higher content of D3117 is about 109Ω/■. This would certainly meet the application requirement of the anti-electrostatic materials (109〜1012Ω/■). The EDA-containing system with excellent antistatic properties is potentially useful in the package material of semiconductor.

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