Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/34258
標題: Step-flow growth on semiconductor-like stepped surface: A kinetic Monte Carlo study
作者: Lin, Y.J.
李豐穎
Chang, J.C.
Tai, C.K.
Wang, B.C.
Li, F.Y.
關鍵字: KMC;step-flow growth;step-edge;temperature effect;step-width effect;diffusion length;transition temperature;vicinal gaas(110) surfaces;crystal surfaces;instability;si(111);homoepitaxy;nucleation;si(001);motion;origin;edge
Project: Journal of Theoretical & Computational Chemistry
期刊/報告no:: Journal of Theoretical & Computational Chemistry, Volume 6, Issue 4, Page(s) 915-927.
摘要: 
Applying Kinetic Monte Carlo (KMC) technique, we investigated the influence of temperature and step-width on the step-flow growth of a (2D + 1) semiconductor-like uniform-spacing stepped model with inverse Ehrlich-Schwoebel (iES) barrier. The relation between diffusion length (R) and half of step width (L/2) was established to characterize the transition temperature T-c for switching between the random deposition growth and step-flow growth on surface. When temperature is lower than T-c, the surface growth mode is dominated by random deposition growth. As temperature approaches to T-c, the surface growth mode gradually switches to step-flow growth. However, only when the temperature is much higher than T-c, the random deposition growth is completely replaced by the step-flow growth. It is found that the step-width effect has a profound influence on surface growth mode in the transition region. The surface morphology undergoes a kinetic step-flow growth to form step-edge aggregation by either increasing temperature or decreasing the step width.
URI: http://hdl.handle.net/11455/34258
ISSN: 0219-6336
DOI: 10.1142/s0219633607003349
Appears in Collections:化學系所

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