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|標題:||Step-flow growth on semiconductor-like stepped surface: A kinetic Monte Carlo study||作者:||Lin, Y.J.
|關鍵字:||KMC;step-flow growth;step-edge;temperature effect;step-width effect;diffusion length;transition temperature;vicinal gaas(110) surfaces;crystal surfaces;instability;si(111);homoepitaxy;nucleation;si(001);motion;origin;edge||Project:||Journal of Theoretical & Computational Chemistry||期刊/報告no：:||Journal of Theoretical & Computational Chemistry, Volume 6, Issue 4, Page(s) 915-927.||摘要:||
Applying Kinetic Monte Carlo (KMC) technique, we investigated the influence of temperature and step-width on the step-flow growth of a (2D + 1) semiconductor-like uniform-spacing stepped model with inverse Ehrlich-Schwoebel (iES) barrier. The relation between diffusion length (R) and half of step width (L/2) was established to characterize the transition temperature T-c for switching between the random deposition growth and step-flow growth on surface. When temperature is lower than T-c, the surface growth mode is dominated by random deposition growth. As temperature approaches to T-c, the surface growth mode gradually switches to step-flow growth. However, only when the temperature is much higher than T-c, the random deposition growth is completely replaced by the step-flow growth. It is found that the step-width effect has a profound influence on surface growth mode in the transition region. The surface morphology undergoes a kinetic step-flow growth to form step-edge aggregation by either increasing temperature or decreasing the step width.
|Appears in Collections:||化學系所|
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