Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/34298
標題: Correlated Electric Fluctuations in GaN Nanowire Devices
作者: Li, L.C.
李明威
Huang, S.Y.
Wei, J.A.
Suen, Y.W.
Lee, M.W.
Hsieh, W.H.
Liu, T.W.
Chen, C.C.
關鍵字: Noise;Low-Frequency Excess Noise;GaN Nanowire;Electric Fluctuation;Correlation;Cross Spectrum;1/f noise;carbon nanotubes
Project: Journal of Nanoscience and Nanotechnology
期刊/報告no:: Journal of Nanoscience and Nanotechnology, Volume 9, Issue 2, Page(s) 1000-1003.
摘要: 
We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.
URI: http://hdl.handle.net/11455/34298
ISSN: 1533-4880
DOI: 10.1166/jnn.2009.C072
Appears in Collections:奈米科學研究所

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