Please use this identifier to cite or link to this item:
|標題:||Correlated Electric Fluctuations in GaN Nanowire Devices||作者:||Li, L.C.
|關鍵字:||Noise;Low-Frequency Excess Noise;GaN Nanowire;Electric Fluctuation;Correlation;Cross Spectrum;1/f noise;carbon nanotubes||Project:||Journal of Nanoscience and Nanotechnology||期刊/報告no：:||Journal of Nanoscience and Nanotechnology, Volume 9, Issue 2, Page(s) 1000-1003.||摘要:||
We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.
|Appears in Collections:||奈米科學研究所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.