Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/34298
DC FieldValueLanguage
dc.contributor.authorLi, L.C.en_US
dc.contributor.author李明威zh_TW
dc.contributor.authorHuang, S.Y.en_US
dc.contributor.authorWei, J.A.en_US
dc.contributor.authorSuen, Y.W.en_US
dc.contributor.authorLee, M.W.en_US
dc.contributor.authorHsieh, W.H.en_US
dc.contributor.authorLiu, T.W.en_US
dc.contributor.authorChen, C.C.en_US
dc.date2009zh_TW
dc.date.accessioned2014-06-06T07:47:31Z-
dc.date.available2014-06-06T07:47:31Z-
dc.identifier.issn1533-4880zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/34298-
dc.description.abstractWe report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.en_US
dc.language.isoen_USzh_TW
dc.relationJournal of Nanoscience and Nanotechnologyen_US
dc.relation.ispartofseriesJournal of Nanoscience and Nanotechnology, Volume 9, Issue 2, Page(s) 1000-1003.en_US
dc.relation.urihttp://dx.doi.org/10.1166/jnn.2009.C072en_US
dc.subjectNoiseen_US
dc.subjectLow-Frequency Excess Noiseen_US
dc.subjectGaN Nanowireen_US
dc.subjectElectric Fluctuationen_US
dc.subjectCorrelationen_US
dc.subjectCross Spectrumen_US
dc.subject1/f noiseen_US
dc.subjectcarbon nanotubesen_US
dc.titleCorrelated Electric Fluctuations in GaN Nanowire Devicesen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1166/jnn.2009.C072zh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextno fulltext-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.languageiso639-1en_US-
item.openairetypeJournal Article-
Appears in Collections:奈米科學研究所
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