Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/34392
標題: (Applied Physics Letters, 90:223117.1-223117.3)Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section
作者: Y. F. Lin
W. B Jian
C. P. Wang
Y. W. Suen
Z. Y. Wu
F. R. Chen
J. J. Kai
J. J. Lin
關鍵字: zinc compounds;wide band gap semiconductors;nanowires;II-VI semiconductors;semiconductor quantum wires;electrical resistivity;Schottky barriers;hopping conduction;semiconductor devices
出版社: USA:American Institute of Physics
Project: Applied Physics Letters, 90:223117.1-p223117.3
URI: http://hdl.handle.net/11455/34392
ISSN: 0003-6951
Appears in Collections:奈米科學研究所

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