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|標題:||Novel preparation and photoelectrochemical properties of gamma-CuI semiconductor nanocrystallites on screen-printed carbon electrodes||作者:||Hsu, C.T.
|關鍵字:||semiconductor nanocrystallites;copper(I) iodide;photoelectrochemical;response;screen-printed electrode;hybrid electrochemical/chemical synthesis;glassy-carbon;cells;films;nanoparticles;deposition;dynamics||Project:||Electroanalysis||期刊/報告no：:||Electroanalysis, Volume 17, Issue 20, Page(s) 1822-1827.||摘要:||
Cuprous iodide (gamma-CuI) is an important semiconductor material having a bang gap of 3.1 eV often used for visible light assisted photoelectrochemical and solar energy conservation systems. We report the first and unique preparation of fine and precisely controlled gamma-CuI semiconductor nanocrystallites on the surface of a screen-printed carbon electrode using a photoelectrochemical copper nanoparticle deposition method with tris(hydroxymethyl)aminomethane (Tris) buffer solution as a control medium. Tris buffer helps to split (Cu2O)-O-1 and COO oxidation states through specific complexation mechanism and in turn to selective iodination of (Cu2O)-O-1 to the formation of gamma-CuI on the electrode. Stable and linear photoelectrochemical response was further demonstrated against variable light intensity up to 400 Klux using the gamma-CuI modified system.
|Appears in Collections:||化學系所|
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