Please use this identifier to cite or link to this item:
標題: On the physical properties of In(2)O(3) films grown on (0001) sapphire substrates by atomic layer deposition
作者: Chi, Wei-Hsu
Yen, Kuo-Yi
Su, Hsin-Lun
Li, Shao-Cian
Gong, Jyh-Rong
關鍵字: indium-tin-oxide;thin-films;epitaxy;precursors;mocvd;gas
Project: Journal of Vacuum Science & Technology A, Volume 29, Issue 3, Page(s) 03A105.
The properties of In(2)O(3) films grown on (0001) plane sapphire substrates by atomic layer deposition using trimethylindium and nitrous oxide were investigated. Using x-ray diffraction and scanning and transmission electron microscopies, In(2)O(3) films were found to deposit on sapphire substrates with their (222) planes parallel to the (0001) planes of sapphire. It was found that there were twin structures inside the In(2)O(3) film with twin boundaries along the {11 (2) over bar} planes. Most In(2)O(3) films deposited on thermally annealed low-temperature-In(2)O(3) buffer-layer-coated substrates exhibited high optical transmittance, low electron concentration, and high electron mobility. The best In(2)O(3) film achieved shows an average transmittance of similar to 90% in the visible regime with electron concentration and mobility being similar to 2 x 10(16) cm(-3) and similar to 60 cm(2)/V s, respectively, at room temperature. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3549146]
ISSN: 0734-2101
DOI: 10.1116/1.3549146
Appears in Collections:物理學系所

Files in This Item:
File SizeFormat Existing users please Login
3-5-2-4-1.pdf545.65 kBAdobe PDFThis file is only available in the university internal network    Request a copy
Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.