Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36522
標題: Structural characteristics of ZnO films grown on (0001) or (11-20) sapphire substrates by atomic layer deposition
作者: Liu, Kuang-Pi
Yen, Kuo-Yi
Lin, Ping-Yuan
Gong, Jyh-Rong
Wu, Kun-Da
Chen, Wei-Li
關鍵字: molecular-beam epitaxy;gan
Project: Journal of Vacuum Science & Technology A, Volume 29, Issue 3, Page(s) 03A101.
摘要: 
The structural characteristics of zinc oxide (ZnO) films deposited on the (0001)- or (11-20)-oriented sapphire substrates were investigated. ZnO films having low temperature ZnO buffer layers were prepared by atomic layer deposition using diethylzinc and nitrous oxide. The ZnO films were analyzed using cross-sectional transmission electron microscopy, high-resolution transmission electron microscopy and x-ray diffractometry. Cross-sectional high-resolution transmission electron microscopic observations showed the presence of extrinsic stacking faults along with Frankel partial dislocations in ZnO near the ZnO/sapphire heterointerface. Based on the results of cross-sectional transmission electron microscopic observations and double-crystal x-ray rocking curve measurements, it was found that buffer-layer annealing treatment tended to reduce the density of threading dislocations in a ZnO film efficiently so that the crystalline quality of the film was greatly improved. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3523289]
URI: http://hdl.handle.net/11455/36522
ISSN: 0734-2101
DOI: 10.1116/1.3523289
Appears in Collections:物理學系所

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