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|標題:||Shapiro steps observed in a superconducting single electron transistor||作者:||Liou, S.
|關鍵字:||josephson;behavior||Project:||Chinese Journal of Physics||期刊/報告no：:||Chinese Journal of Physics, Volume 45, Issue 2, Page(s) 230-236.||摘要:||
The dc current-voltage (IV) characteristics of a superconducting single electron transistor irradiated with microwaves up to 18 GHz are experimentally studied. The switching current as a function of gate voltage demonstrates clear phase-charge duality in a Josephson junction. At higher microwave power levels, Shapiro steps in IV characteristics are observed. The step height in IV can be analyzed using the model an ac-voltage source applied to a single Josephson junction.
|Appears in Collections:||物理學系所|
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