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|標題:||Magnetoresistance fluctuations in a weak disorder indium nitride nanowire||作者:||郭華丞
|關鍵字:||conductance fluctuations;band-gap;localization;systems||Project:||Journal of Physics D-Applied Physics||期刊/報告no：:||Journal of Physics D-Applied Physics, Volume 42, Issue 18.||摘要:||
We report measurements of magnetoresistance (MR) fluctuations in a weak disorder indium nitride nanowire. The MR fluctuations are reproducible, aperiodic and symmetric in magnetic field but are asymmetric upon reversal of bias direction. The fluctuations are analysed for both perpendicular and parallel external magnetic field configurations in the light of tunnel magnetoresistance at low field and impurity scattering at higher field. The asymmetry in bias reversal is caused by breakdown of time reversal symmetry.
|Appears in Collections:||物理學系所|
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