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|標題:||Comparison of the performance of InGaN/AlGaN MQW LEDs grown on c-plane and a-plane sapphire substrates||作者:||Liao, W.T.
|關鍵字:||light-emitting-diodes;molecular-beam epitaxy;laser-diodes;thin-films;gan;dislocations;layers;algan||Project:||Electrochemical and Solid State Letters||期刊/報告no：:||Electrochemical and Solid State Letters, Volume 10, Issue 1, Page(s) H5-H7.||摘要:||
We report a comparative study on the performance of InGaN/AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) fabricated on c- and a-plane sapphire substrates, respectively. It was found that the LEDs grown on a-plane sapphire substrates exhibited enhanced electroluminescence intensity, decreased double crystal X-ray diffraction linewidth, reduced etching pit density, and smaller ideality factor compared to those deposited on c- plane sapphire substrates. The improved LED characteristics are attributed to threading dislocation density decrement inside the LEDs due to the reduced mismatch between LED structure and a-plane sapphire substrate. (c) 2006 The Electrochemical Society.
|Appears in Collections:||物理學系所|
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