Comparison of the performance of InGaN/AlGaN MQW LEDs grown on c-plane and a-plane sapphire substrates

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Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36628

標題:	Comparison of the performance of InGaN/AlGaN MQW LEDs grown on c-plane and a-plane sapphire substrates
作者:	Liao, W.T. 龔志榮 Gong, J.R. Wang, C.L. Wang, W.L. Tsuei, C.C. Lee, C.Y. Chen, K.C. Ho, J.R. Luo, R.C.
關鍵字:	light-emitting-diodes;molecular-beam epitaxy;laser-diodes;thin-films;gan;dislocations;layers;algan
Project:	Electrochemical and Solid State Letters
期刊/報告no：:	Electrochemical and Solid State Letters, Volume 10, Issue 1, Page(s) H5-H7.
摘要:	We report a comparative study on the performance of InGaN/AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) fabricated on c- and a-plane sapphire substrates, respectively. It was found that the LEDs grown on a-plane sapphire substrates exhibited enhanced electroluminescence intensity, decreased double crystal X-ray diffraction linewidth, reduced etching pit density, and smaller ideality factor compared to those deposited on c- plane sapphire substrates. The improved LED characteristics are attributed to threading dislocation density decrement inside the LEDs due to the reduced mismatch between LED structure and a-plane sapphire substrate. (c) 2006 The Electrochemical Society.
URI:	http://hdl.handle.net/11455/36628
ISSN:	1099-0062
DOI:	10.1149/1.2364379
Appears in Collections:	物理學系所

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