Please use this identifier to cite or link to this item:
|標題:||Improvement in the characteristics of GaN-based light-emitting diodes by inserting AlGaN-GaN short-period superlattices in GaN underlayers||作者:||龔志榮
|關鍵字:||GaN;light-emitting diode (LED);short-period superlattice (SPSL);blue||Project:||Ieee Photonics Technology Letters||期刊/報告no：:||Ieee Photonics Technology Letters, Volume 18, Issue 13-16, Page(s) 1497-1499.||摘要:||
We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al0.3Ga0.7N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al0.3Ga0.7N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al0.3Ga0.7N(2 nm)-GaN(2 mn) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.
|Appears in Collections:||物理學系所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.