Please use this identifier to cite or link to this item:
標題: Improvement in the characteristics of GaN-based light-emitting diodes by inserting AlGaN-GaN short-period superlattices in GaN underlayers
作者: 龔志榮
Wang, C.L.
Gong, J.R.
Yeh, M.F.
Wu, B.J.
Liao, W.T.
Lin, T.Y.
Lin, C.K.
關鍵字: GaN;light-emitting diode (LED);short-period superlattice (SPSL);blue
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 18, Issue 13-16, Page(s) 1497-1499.
We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al0.3Ga0.7N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al0.3Ga0.7N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al0.3Ga0.7N(2 nm)-GaN(2 mn) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.
ISSN: 1041-1135
DOI: 10.1109/lpt.2006.877587
Appears in Collections:物理學系所

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.