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|標題:||Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes||作者:||龔志榮
|關鍵字:||InGaN/GaN MQW;light-emitting diode (LED);short-period superlattice;(SPSL);molecular-beam epitaxy;gan;diffusion;layers||Project:||Materials Science and Engineering B-Solid State Materials for Advanced Technology||期刊/報告no：:||Materials Science and Engineering B-Solid State Materials for Advanced Technology, Volume 138, Issue 2, Page(s) 180-183.||摘要:||
Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In0.2Ga0.8N/GaN MQW LED structures enables the improved LED performance. (c) 2007 Elsevier B.V. All rights reserved.
|Appears in Collections:||物理學系所|
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