Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

DSpace CRIS

Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36645

標題:	Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes
作者:	龔志榮 Wang, C.L. Tsai, M.C. Gong, J.R. Liao, W.T. Lin, P.Y. Yen, K.Y. Chang, C.C. Lin, H.Y. Hwang, S.K.
關鍵字:	InGaN/GaN MQW;light-emitting diode (LED);short-period superlattice;(SPSL);molecular-beam epitaxy;gan;diffusion;layers
Project:	Materials Science and Engineering B-Solid State Materials for Advanced Technology
期刊/報告no：:	Materials Science and Engineering B-Solid State Materials for Advanced Technology, Volume 138, Issue 2, Page(s) 180-183.
摘要:	Investigations were conducted to explore the effect of Al0.3Ga0.7N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In0.2Ga0.8N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al0.3Ga0.7N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In0.2Ga0.8N/GaN MQW LED structures enables the improved LED performance. (c) 2007 Elsevier B.V. All rights reserved.
URI:	http://hdl.handle.net/11455/36645
ISSN:	0921-5107
DOI:	10.1016/j.mseb.2007.01.005
Appears in Collections:	物理學系所

Show full item record

TAIR Related Article

Check