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標題: On the characteristics of AlGaN films grown on (111) and (001)Si substrates
作者: 龔志榮
Wang, C.L.
Gong, J.R.
Liao, W.T.
Wang, W.L.
Lin, T.Y.
Lin, C.K.
關鍵字: AlGaN/Si;OMVPE;OM and TEM;photoluminescence;molecular-beam epitaxy;gan;si(111);silicon;deposition;diodes
Project: Solid State Communications
期刊/報告no:: Solid State Communications, Volume 137, Issue 1-2, Page(s) 63-66.
High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000 degrees C\ using high temperature AIN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the AlxGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x <= 0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content. (c) 2005 Elsevier Ltd. All rights reserved.
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2005.10.008
Appears in Collections:物理學系所

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