Please use this identifier to cite or link to this item:
|標題:||On the characteristics of AlGaN films grown on (111) and (001)Si substrates||作者:||龔志榮
|關鍵字:||AlGaN/Si;OMVPE;OM and TEM;photoluminescence;molecular-beam epitaxy;gan;si(111);silicon;deposition;diodes||Project:||Solid State Communications||期刊/報告no：:||Solid State Communications, Volume 137, Issue 1-2, Page(s) 63-66.||摘要:||
High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000 degrees C\ using high temperature AIN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the AlxGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x <= 0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content. (c) 2005 Elsevier Ltd. All rights reserved.
|Appears in Collections:||物理學系所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.