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http://hdl.handle.net/11455/36690
標題: | (Journal of Applied Physics,92(7):3717-3723)Energy band structure of strained Si 1-x C x alloys on Si(001) substrate | 作者: | S. T. Chang C. Y. Lin C. W. Liu |
關鍵字: | silicon compounds;silicon;elemental semiconductors;wide band gap semiconductors;LCAO calculations;spin-orbit interactions;bond lengths;bond angles;effective mass;interface states;energy gap | 出版社: | New York,USA:American Institute of Physics | Project: | Journal of Applied Physics, Volume 92, Issue 7, Page(s) 3717-3723. | URI: | http://hdl.handle.net/11455/36690 |
Appears in Collections: | 物理學系所 |
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