Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36690
標題: (Journal of Applied Physics,92(7):3717-3723)Energy band structure of strained Si 1-x C x alloys on Si(001) substrate
作者: S. T. Chang
C. Y. Lin
C. W. Liu
關鍵字: silicon compounds;silicon;elemental semiconductors;wide band gap semiconductors;LCAO calculations;spin-orbit interactions;bond lengths;bond angles;effective mass;interface states;energy gap
出版社: New York,USA:American Institute of Physics
Project: Journal of Applied Physics, Volume 92, Issue 7, Page(s) 3717-3723.
URI: http://hdl.handle.net/11455/36690
Appears in Collections:物理學系所

Show full item record
 

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.