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http://hdl.handle.net/11455/36695
標題: | (Japanese Journal of Applied Physics,39(1):244-247)Valence band properties of relaxed ternary group IV semiconductor alloys | 作者: | Y. Lin C. W. Liu W. Z. Chen |
關鍵字: | SiGeC alloys;density-of-states effective mass;cyclotron resonance effective mass;anisotropy;LCAO approximation;spin-orbit interactions;k·p method;valence band | 出版社: | Toyama,Japan:The Japan Society of Applied Physics | Project: | Japanese Journal of Applied Physics, Volume 39, Issue 1, Page(s) 244-247. | URI: | http://hdl.handle.net/11455/36695 |
Appears in Collections: | 物理學系所 |
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