Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36695
標題: (Japanese Journal of Applied Physics,39(1):244-247)Valence band properties of relaxed ternary group IV semiconductor alloys
作者: Y. Lin
C. W. Liu
W. Z. Chen
關鍵字: SiGeC alloys;density-of-states effective mass;cyclotron resonance effective mass;anisotropy;LCAO approximation;spin-orbit interactions;k·p method;valence band
出版社: Toyama,Japan:The Japan Society of Applied Physics
Project: Japanese Journal of Applied Physics, Volume 39, Issue 1, Page(s) 244-247.
URI: http://hdl.handle.net/11455/36695
Appears in Collections:物理學系所

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