Please use this identifier to cite or link to this item:
標題: (Applied Physics Letters,70(11):1441-1443)Hole Effective Masses in Relaxed Si1-xCx and Si1-yGey Alloys
作者: C. Y. Lin
C. W. Liu
關鍵字: effective mass;LCAO calculations;spin-orbit interactions;Ge-Si alloys;semiconductor materials;silicon compounds;wide band gap semiconductors
出版社: New York,USA:American Institute of Physics
Project: Applied Physics Letters, Volume 70, Issue 11, Page(s) 1441-1443.
Appears in Collections:物理學系所

Show full item record

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.