Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36712
標題: (Journal of the Korean Physical Society,53(2):1024-1029)Impact of Stress Engineering on Electron Mobility and Ballistic Current for Strianed Si NMOSFETs
作者: Shu-Tong Chang
S. H. Liao
Wei-Ching Wang
Chung-Yi Lin
Jun-Wei Fan
關鍵字: Uniaxial stress;Mobility;Subband;Self-consistent;Ballistic current
出版社: Amsterdam,Netherlands:Elsevier Science Publishers B. V.
Project: Journal of the Korean Physical Society, Volume 53, Issue 2, Page(s) 1024-1029.
URI: http://hdl.handle.net/11455/36712
Appears in Collections:物理學系所

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