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http://hdl.handle.net/11455/36715| 標題: | (Thin Solid Films,517(1):356-358)The impact of uniaxial stress on subband structure and mobility of strain Si NMOSFETs | 作者: | S. T. Chang S. H. Liao C. Y. Lin |
關鍵字: | Uniaxial stress;Mobility;Subband;Self-consistent | 出版社: | Amsterdam,Netherlands:Elsevier Science Publishers B. V. | Project: | Thin Solid Films, Volume 517, Issue 1, Page(s) 356-358. | URI: | http://hdl.handle.net/11455/36715 |
| Appears in Collections: | 物理學系所 |
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