Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36715
標題: (Thin Solid Films,517(1):356-358)The impact of uniaxial stress on subband structure and mobility of strain Si NMOSFETs
作者: S. T. Chang
S. H. Liao
C. Y. Lin
關鍵字: Uniaxial stress;Mobility;Subband;Self-consistent
出版社: Amsterdam,Netherlands:Elsevier Science Publishers B. V.
Project: Thin Solid Films, Volume 517, Issue 1, Page(s) 356-358.
URI: http://hdl.handle.net/11455/36715
Appears in Collections:物理學系所

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