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標題: | (Japanese Journal of Applied Physics,46(4B):2107-2111)Impact of Source/Drain Si1 yCy Stressors on Silicon-on-Insulator N-type Metal-Oxide-Semiconductor Field-Effect Transistors | 作者: | Chung-Yi Lin Shu-Tong Chang Jacky Huang Wei-Ching Wang Jun-Wei Fan |
關鍵字: | strained Si;mobility;SiC;stressor | 出版社: | Toyama,Japan:The Japan Society of Applied Physics | Project: | Japanese Journal of Applied Physics,46(4B), Page(s) 2107-2111. | URI: | http://hdl.handle.net/11455/36717 |
Appears in Collections: | 物理學系所 |
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