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標題: (Japanese Journal of Applied Physics,46(4B):2107-2111)Impact of Source/Drain Si1 yCy Stressors on Silicon-on-Insulator N-type Metal-Oxide-Semiconductor Field-Effect Transistors
作者: Chung-Yi Lin
Shu-Tong Chang
Jacky Huang
Wei-Ching Wang
Jun-Wei Fan
關鍵字: strained Si;mobility;SiC;stressor
出版社: Toyama,Japan:The Japan Society of Applied Physics
Project: Japanese Journal of Applied Physics,46(4B), Page(s) 2107-2111.
Appears in Collections:物理學系所

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