Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36717
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dc.contributor.authorChung-Yi Linen_US
dc.contributor.authorShu-Tong Changen_US
dc.contributor.authorJacky Huangen_US
dc.contributor.authorWei-Ching Wangen_US
dc.contributor.authorJun-Wei Fanen_US
dc.contributor.other國立中興大學物理系zh_TW
dc.date2007zh_TW
dc.date.accessioned2014-06-06T07:57:13Z-
dc.date.available2014-06-06T07:57:13Z-
dc.identifier.urihttp://hdl.handle.net/11455/36717-
dc.language.isoen_USzh_TW
dc.publisherToyama,Japan:The Japan Society of Applied Physicsen_US
dc.relationJapanese Journal of Applied Physics,46(4B), Page(s) 2107-2111.en_US
dc.subjectstrained Sien_US
dc.subjectmobilityen_US
dc.subjectSiCen_US
dc.subjectstressoren_US
dc.title(Japanese Journal of Applied Physics,46(4B):2107-2111)Impact of Source/Drain Si1 yCy Stressors on Silicon-on-Insulator N-type Metal-Oxide-Semiconductor Field-Effect Transistorsen_US
item.languageiso639-1en_US-
item.grantfulltextnone-
item.fulltextno fulltext-
Appears in Collections:物理學系所
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