Please use this identifier to cite or link to this item:
http://hdl.handle.net/11455/36717
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung-Yi Lin | en_US |
dc.contributor.author | Shu-Tong Chang | en_US |
dc.contributor.author | Jacky Huang | en_US |
dc.contributor.author | Wei-Ching Wang | en_US |
dc.contributor.author | Jun-Wei Fan | en_US |
dc.contributor.other | 國立中興大學物理系 | zh_TW |
dc.date | 2007 | zh_TW |
dc.date.accessioned | 2014-06-06T07:57:13Z | - |
dc.date.available | 2014-06-06T07:57:13Z | - |
dc.identifier.uri | http://hdl.handle.net/11455/36717 | - |
dc.language.iso | en_US | zh_TW |
dc.publisher | Toyama,Japan:The Japan Society of Applied Physics | en_US |
dc.relation | Japanese Journal of Applied Physics,46(4B), Page(s) 2107-2111. | en_US |
dc.subject | strained Si | en_US |
dc.subject | mobility | en_US |
dc.subject | SiC | en_US |
dc.subject | stressor | en_US |
dc.title | (Japanese Journal of Applied Physics,46(4B):2107-2111)Impact of Source/Drain Si1 yCy Stressors on Silicon-on-Insulator N-type Metal-Oxide-Semiconductor Field-Effect Transistors | en_US |
item.languageiso639-1 | en_US | - |
item.grantfulltext | none | - |
item.fulltext | no fulltext | - |
Appears in Collections: | 物理學系所 |
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