Please use this identifier to cite or link to this item:
http://hdl.handle.net/11455/36718
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shu-Tong Chang | en_US |
dc.contributor.author | C. Y. Lin | en_US |
dc.contributor.other | 國立中興大學物理系 | zh_TW |
dc.date | 2005-11 | zh_TW |
dc.date.accessioned | 2014-06-06T07:57:14Z | - |
dc.date.available | 2014-06-06T07:57:14Z | - |
dc.identifier.uri | http://hdl.handle.net/11455/36718 | - |
dc.language.iso | en_US | zh_TW |
dc.publisher | Toyama,Japan:The Japan Society of Applied Physics | en_US |
dc.relation | Japanese Journal of Applied Physics,44(4B), Page(s) 2257-2263. | en_US |
dc.subject | Si1-xCx | en_US |
dc.subject | mobility | en_US |
dc.subject | alloy scattering | en_US |
dc.subject | strain | en_US |
dc.subject | impurity scattering | en_US |
dc.subject | Monte Carlo simulation | en_US |
dc.title | (Japanese Journal of Applied Physics,44(4B):2257-2263)Electron Transport Model for Strained Silicon-Carbon Alloy | en_US |
item.languageiso639-1 | en_US | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
Appears in Collections: | 物理學系所 |
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