Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36718
DC FieldValueLanguage
dc.contributor.authorShu-Tong Changen_US
dc.contributor.authorC. Y. Linen_US
dc.contributor.other國立中興大學物理系zh_TW
dc.date2005-11zh_TW
dc.date.accessioned2014-06-06T07:57:14Z-
dc.date.available2014-06-06T07:57:14Z-
dc.identifier.urihttp://hdl.handle.net/11455/36718-
dc.language.isoen_USzh_TW
dc.publisherToyama,Japan:The Japan Society of Applied Physicsen_US
dc.relationJapanese Journal of Applied Physics,44(4B), Page(s) 2257-2263.en_US
dc.subjectSi1-xCxen_US
dc.subjectmobilityen_US
dc.subjectalloy scatteringen_US
dc.subjectstrainen_US
dc.subjectimpurity scatteringen_US
dc.subjectMonte Carlo simulationen_US
dc.title(Japanese Journal of Applied Physics,44(4B):2257-2263)Electron Transport Model for Strained Silicon-Carbon Alloyen_US
item.languageiso639-1en_US-
item.fulltextno fulltext-
item.grantfulltextnone-
Appears in Collections:物理學系所
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