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標題: (Japanese Journal of Applied Physics,44(4B):2257-2263)Electron Transport Model for Strained Silicon-Carbon Alloy
作者: Shu-Tong Chang
C. Y. Lin
關鍵字: Si1-xCx;mobility;alloy scattering;strain;impurity scattering;Monte Carlo simulation
出版社: Toyama,Japan:The Japan Society of Applied Physics
Project: Japanese Journal of Applied Physics,44(4B), Page(s) 2257-2263.
Appears in Collections:物理學系所

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