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http://hdl.handle.net/11455/36718
標題: | (Japanese Journal of Applied Physics,44(4B):2257-2263)Electron Transport Model for Strained Silicon-Carbon Alloy | 作者: | Shu-Tong Chang C. Y. Lin |
關鍵字: | Si1-xCx;mobility;alloy scattering;strain;impurity scattering;Monte Carlo simulation | 出版社: | Toyama,Japan:The Japan Society of Applied Physics | Project: | Japanese Journal of Applied Physics,44(4B), Page(s) 2257-2263. | URI: | http://hdl.handle.net/11455/36718 |
Appears in Collections: | 物理學系所 |
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