Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/36720
標題: (Journal of Applied Physics,96(9):5037-5041)Hole Effective Mass in Strained Si 1-x C x Alloys
作者: C. Y. Lin
S. T. Chang
C. W. Liu
關鍵字: silicon compounds;wide band gap semiconductors;effective mass;stress effects;electronic density of states;valence bands;hole density
出版社: New York,USA:American Institute of Physics
Project: Journal of Applied Physics, Volume 96, Issue 9, Page(s) 5037-5041.
URI: http://hdl.handle.net/11455/36720
Appears in Collections:物理學系所

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