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http://hdl.handle.net/11455/36720
標題: | (Journal of Applied Physics,96(9):5037-5041)Hole Effective Mass in Strained Si 1-x C x Alloys | 作者: | C. Y. Lin S. T. Chang C. W. Liu |
關鍵字: | silicon compounds;wide band gap semiconductors;effective mass;stress effects;electronic density of states;valence bands;hole density | 出版社: | New York,USA:American Institute of Physics | Project: | Journal of Applied Physics, Volume 96, Issue 9, Page(s) 5037-5041. | URI: | http://hdl.handle.net/11455/36720 |
Appears in Collections: | 物理學系所 |
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