Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39786
標題: Low-temperature oxidation of SiGe by liquid-phase deposition
作者: Chen, Y.H.
貢中元
Kung, C.Y.
Hwang, J.D.
Lin, H.Y.
Chan, H.J.
Chen, P.S.
關鍵字: silicon dioxide;SiGe;liquid-phase deposition;MOS;rapid thermal-oxidation;oxide;layers;bicmos
Project: Applied Surface Science
期刊/報告no:: Applied Surface Science, Volume 254, Issue 19, Page(s) 6034-6036.
摘要: 
Low-temperature silicon dioxide (SiO(2))films were grown on silicon germanium (SiGe) surfaces using the liquid-phase deposition (LPD) method. The growth solutions of LPD-SiO(2) are hydrofluorosilicic acid (H(2)SiF(6)) and boric acid (H(3)BO(3)). It was found that the growth rate increases with increasing temperature and concentration of H(3)BO(3). The Auger electron spectroscopy profile shows that no pileup of Ge atoms occurs at the interface of SiO(2)/SiGe after the LPD-SiO(2) growth. Al/LPD-SiO(2)/p-SiGe MOS capacitors were prepared to determine capacitance-voltage (C-V) and current-voltage (I-V) characteristics. In our experiments, a low leakage current density of 8.69 x 10(-9) A/cm(2) under a 2 MV/cm electricfield was observed. Such a value is much smaller than those of plasma- and thermal-oxides as a result of no plasma damage and a lower growth temperature. Moreover, lower oxide charges and interface charge densities of 3.82 x 10(10) cm(-2) and 1.12 x 10(11) eV(1) cm(2), respectively, were achieved in our LPD-SiO2 compared to direct photochemical-vapor-deposition-SiO(2). (c) 2008 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/39786
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.02.120
Appears in Collections:光電工程研究所

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