Please use this identifier to cite or link to this item:
|標題:||Deposition of uniform mu c-Si : H layers on plasma etched vertical ZnO nanowires||作者:||Lin, Y.R.
|關鍵字:||room-temperature;growth||Project:||Crystengcomm||期刊/報告no：:||Crystengcomm, Volume 12, Issue 5, Page(s) 1388-1390.||摘要:||
This study introduces the deposition of mu c-Si : H layers on vertically well-aligned ZnO nanowires by very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD). It was found that mu c-Si : H deposited on un-etched ZnO nanowires, with a high length-to-diameter aspect ratio, were nail-shaped due to the rapid growth of mu c-Si : H along the lateral (0002) plane. By slightly etching the ZnO nanowires prior to mu c-Si : H deposition, mu c-Si : H films were coated uniformly on the surface of ZnO nanowires. The ZnO nanowires uniformly coated by plasma etching are potentially useful not only for solar cell applications but also for any nanodevice that uses nanowires as a nanoelectrode.
|Appears in Collections:||光電工程研究所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.