Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39801
標題: Deposition of uniform mu c-Si : H layers on plasma etched vertical ZnO nanowires
作者: Lin, Y.R.
貢中元
Chang, C.W.
Chen, Y.H.
Liu, J.C.
Kung, C.Y.
關鍵字: room-temperature;growth
Project: Crystengcomm
期刊/報告no:: Crystengcomm, Volume 12, Issue 5, Page(s) 1388-1390.
摘要: 
This study introduces the deposition of mu c-Si : H layers on vertically well-aligned ZnO nanowires by very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD). It was found that mu c-Si : H deposited on un-etched ZnO nanowires, with a high length-to-diameter aspect ratio, were nail-shaped due to the rapid growth of mu c-Si : H along the lateral (0002) plane. By slightly etching the ZnO nanowires prior to mu c-Si : H deposition, mu c-Si : H films were coated uniformly on the surface of ZnO nanowires. The ZnO nanowires uniformly coated by plasma etching are potentially useful not only for solar cell applications but also for any nanodevice that uses nanowires as a nanoelectrode.
URI: http://hdl.handle.net/11455/39801
ISSN: 1466-8033
DOI: 10.1039/b917746a
Appears in Collections:光電工程研究所

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