Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39809
標題: Improving the performance of SiGe metal-semiconductor-metal photodetectors by using an amorphous silicon passivation layer
作者: Chen, Y.H.
貢中元
Hwang, J.D.
Kung, C.Y.
Chen, R.S.
Wei, C.S.
Wu, C.K.
Liu, J.C.
關鍵字: amorphous silicon;metal-semiconductor-metal;passivation;photodetector;SiGe;phototransistor;design
Project: Ieee Electron Device Letters
期刊/報告no:: Ieee Electron Device Letters, Volume 28, Issue 12, Page(s) 1111-1113.
摘要: 
SiGe metal-semiconductor-metal photodetectors (MSM-PDs) with a thin amorphous silicon (a-Si:H) passivation layer have been fabricated by an ultrahigh-vacuum chemical vapor deposition (UHVCVD) system. It was, found that the thin (30 nm) a-Si:H passivation layer could effectively suppress the dark current of SiGe MSM-PDs. As compared to the unpassivated devices, the dark current for devices with a-Si:H passivation layers was drastically reduced by 1.7 x 10(5), and the photo-to-dark current ratio was enhanced by 1.33 X 10(6). We attribute this result to the passivation effect of a-Si:H films on SiGe surfaces by hydrogen diffusion, which can compensate the dangling bonds on the SiGe surface.
URI: http://hdl.handle.net/11455/39809
ISSN: 0741-3106
DOI: 10.1109/led.2007.909853
Appears in Collections:光電工程研究所

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