Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/39817
標題: Investigation of Electrical Properties of Thermally Annealed SiGe Metal-Oxide-Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide
作者: Kung, C.Y.
貢中元
Hwang, J.D.
Chen, Y.H.
Chen, P.S.
Chan, H.J.
關鍵字: oxidation;plasma;layers
Project: Japanese Journal of Applied Physics
期刊/報告no:: Japanese Journal of Applied Physics, Volume 48, Issue 8.
摘要: 
Room-temperature (30 degrees C) silicon dioxide (SiO(2)) has been grown on strained SiGe layers by liquid-phase deposition (LPD). Metal-oxide-semiconductor (MOS) capacitors have also been fabricated by annealing at various temperatures (200-400 degrees C) in nitrogen. A very low leakage current density of 3.25 x 10(-8) A/cm(2) was obtained at an electric field of 10 MV/cm for as-grown LPD-SiO(2) films. After annealing, the leakage current density decreased by one order of magnitude and the fixed oxide charge density also significantly decreased to 4.7 x 10(9) cm(-2) in the capacitor annealed at 400 degrees C. The mechanism by which this occurred is explained. (C) 2009 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11455/39817
ISSN: 0021-4922
DOI: 10.1143/jjap.48.086503
Appears in Collections:光電工程研究所

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